AOD472A Discrete Semiconductor Products |
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| Allicdata Part #: | 785-1280-2-ND |
| Manufacturer Part#: |
AOD472A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 25V 55A TO-252 |
| More Detail: | N-Channel 25V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (T... |
| DataSheet: | AOD472A Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 12.5V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | SDMOS™ |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 46A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The AOD472A is an advanced power MOSFET that is widely used in the fields of power electronics, automated production and microprocessor based products. It has a high efficiency capacity of up to 91%, thus making it ideal for applications where power efficiency and efficiency optimization are important. It is a silicon-gate surface-mountable junction MOSFET that provides a bidirectional containment current switching function.
The AOD472A MOSFET works on the principle of an insulated gate field effect transistor (IGFET). A typical IGFET uses two input signals - a positive gate-to-source voltage and a negative gate-to-drain voltage - to control a current. When the gate-to-source voltage is high, the light-conducting channel between the source and the drain is created. An electric current from the source through the channel to the drain is then allowed and allowed to switch between two states - ON and OFF. As the voltage between the gate and the source and the drain changes, the state of the MOSFET also changes, resulting in an efficient power switching.
The AOD472A MOSFET is designed primarily for use in power applications. It can switch low-frequency DC and pulsed loads up to 200V and 6A with a maximum gate threshold voltage of 5V. It can also switch high-frequency AC loads up to 160V and 1A with a maximum gate threshold voltage of 4V. Due to its high efficiency, the AOD472A is ideal for use in applications with high efficiency requirements such as automatic assembly machinery, automotive electronics, and battery charging.
The AOD472A has a wide range of features and capabilities. It features an extended drain-source breakdown voltage, which guarantees low power dissipation and high reliability over temperature, pressure and power cycling. Its fast switching characteristics enable the device to switch from a low to a high-speed state in less than two microseconds. In addition, its monolithic construction ensures that the device’s performance is consistent and highly reliable. The device also features low power consumption and low impedance resulting in higher power efficiency.
In conclusion, the AOD472A is an advanced MOSFET designed for power applications requiring efficiency and power optimization. Its wide range of features make it suitable for high efficiency, fast switching and reliability. Its extended drain-source breakdown voltage and fast switching characteristics ensure a reliable operation over temperature, pressure and power cycling. Its monolithic construction guarantees a consistent and highly reliable device performance. The device’s low power consumption, low impedance and high efficiency make it ideal for applications where power efficiency and efficiency optimization are important.
The specific data is subject to PDF, and the above content is for reference
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AOD472A Datasheet/PDF