AOD4158P Allicdata Electronics
Allicdata Part #:

AOD4158P-ND

Manufacturer Part#:

AOD4158P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 13A TO252
More Detail: N-Channel 30V 13A (Ta), 46A (Tc) 2.5W (Ta), 32W (T...
DataSheet: AOD4158P datasheetAOD4158P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 46A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AOD4158P is a field effect transistor used in many electronic applications. The AOD4158P is an Enhancement-Mode Field-Effect Transistor (E-mode FET) that utilizes advanced trench technology and low voltage design to minimize on-state resistance and provide superior switching characteristics. The AOD4158P is designed for high current and high frequency switching applications in the DC/DC converter or similar power supplies.

AOD4158P is made of two kinds of semiconductor materials. One is P-type semiconductor material, and the other is N-type semiconductor material. P-type semiconductor material has more positive charge carriers, called holes, than negative charge carriers, called electrons. N-type semiconductor material has more negative charge carriers, called electrons, than positive charge carriers, called holes. When a potential is applied to the gate terminal of the transistor, the P-type semiconductor material becomes N-type semiconductor material and the N-type semiconductor material becomes P-type semiconductor material. This change in the semiconductor material affects the electric field between the gate and the source, resulting in an increase in current flow through the transistor.

The AOD4158P is an N-Channel Enhancement-Mode Field Effect Transistor (E-mode FET) that is optimized for high current and frequency switching applications. The transistor utilizes a high-voltage process to minimize the on-state resistance and provide superior switching characteristics. The AOD4158P is designed with a drain to source voltage rating of up to +-25 V, which is capable of handling transient voltages associated with DC/DC converters and high-frequency switching applications.

The AOD4158P also features a monolithic structure that provides superior performance in applications with high-speed switching. The monolithic structure eliminates the need for external components and allows the transistor to maintain a low-voltage level throughout its switching cycle, resulting in improved efficiency and reliability. The low-voltage characteristics also make the AOD4158P ideal for pulse and switching applications.

The AOD4158P is also capable of providing linear current flow in a wide range of voltages. This is due to the device\'s ultra-low total gate capacitance, which enables it to respond quickly to changes in voltage. The linear response of the device allows it to maintain a constant current output even in high-frequency switching applications, resulting in improved system efficiency.

The AOD4158P is also designed to minimize switching noise in the system, allowing for a higher level of performance and reliability in sensitive circuits. The device is also designed with an integrated diode to protect the transistor from reverse-voltage damage, further expanding its range of applications and extending its life expectancy.

The AOD4158P is a highly reliable, cost-effective solution for high current and high-frequency switching applications. Its low on-state resistance, low total gate capacitance, and linear response make it well-suited for many applications, while its internal protection diodes and low noise characteristics make it an excellent choice for sensitive circuits. The transistor is also compatible with all popular circuit designs and offers superior price performance ratio.

The specific data is subject to PDF, and the above content is for reference

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