Allicdata Part #: | AOD4136-ND |
Manufacturer Part#: |
AOD4136 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 25V 25A TO252 |
More Detail: | N-Channel 25V 25A (Tc) 2.1W (Ta), 30W (Tc) Surface... |
DataSheet: | AOD4136 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 734pF @ 12.5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AOD4136 is a depletion-mode power Metal-Oxide-Semiconductor-Field-Effect Transistor (MOSFET). It is designed to be used in a wide variety of applications including power management, power conversion, and power switching. It is widely used for DC-DC point-of-load (POL) converters, hot-swapping, and other power devices. The device’s small size and low on-resistance (RON) make it suitable for many high power applications. This article discusses the application field and working principle of this MOSFET.
The AOD4136 is a power MOSFET that is designed to be used in a variety of applications. It is well suited for power management, power conversion, and power switching. This power MOSFET is also known as a Power Gate. It is used in many high power applications, such as DC-DC point-of-load (POL) converters, hot-swapping, and other power devices. This device is designed to be able to handle high current levels with very low off-state leakage and low on-resistance. It has a low gate capacitance, which makes it well suited for high-frequency applications. It has a wide drain-source breakdown voltage range of -4V to -30V. The maximum drain current is 30A, and the maximum drain-source voltage is -120V.
The AOD4136 has an insulated-gate structure, which helps to reduce electrical parasitics and enhance the performance of the device. It has an internal automatic ESD protection circuit, which helps to protect the device from electrical overstress and overvoltage conditions. The device also has a very fast reverse-recovery time, which makes it suitable for high-frequency applications. It has a low gate threshold voltage, which makes it easy to turn on and off. The device also has a low gate charge, which helps to reduce switching losses.
The working principle of the AOD4136 is based on the same principle as other power MOSFETs. When a voltage is applied to the gate of the device, the electrons in the silicon lattice are displaced. This creates a positive electric field in the region between the gate and the source, called the channel. This results in current flow, called the source-drain current, and the device is said to be turned “on”. When the voltage is removed from the gate, the electric field collapses and the device is said to be turned “off”.
The AOD4136 is an excellent device for a wide range of applications, such as power management, power conversion, and power switching. The device has a low gate capacitance and a low drain-source breakdown voltage, which makes it well suited for high-frequency applications. Its low gate threshold voltage and low gate charge make it easy to use and helps to reduce switching losses. Its wide drain-source voltage and high current ratings make it suitable for many high power applications. Its insulated-gate structure helps to reduce electrical parasitics and enhance the performance of the device. Its fast reverse- recovery time and internal automatic ESD protection make it safe and reliable, making it a great device for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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