AOD456 Allicdata Electronics
Allicdata Part #:

AOD456-ND

Manufacturer Part#:

AOD456

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 25V 50A TO252
More Detail: N-Channel 25V 50A (Tc) 3W (Ta), 50W (Tc) Surface M...
DataSheet: AOD456 datasheetAOD456 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 12.5V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AOD456 Application Field and Working Principle

AOD456 is a single-gate oxide-insulated metal oxide semiconductor field effect transistor (MOSFET). It is a four-terminal device, with a gate, a source, and two drains. AOD456 MOSFETs are widely used in power management and voltage regulation systems, due to their ability to operate at high current levels and their low on-resistance. The AOD456 is a power-management MOSFET that is manufactured from triple-layered oxide inserts. This semi-insulating layer provides improved gate-insulation for high-voltage applications. The gate insulation is strong enough to withstand very high voltages and high temperatures, which makes the AOD456 well-suited for the most challenging applications.

Basic Working Principle

MOSFETs operate on the basic principle of controlling current flow by the application of an electric field between the drain and source. In the on-state, a positive voltage is applied to the gate, which creates an electric field that attracts electrons from the source. This lowers the voltage between the source and drain, allowing current to flow between them. When the voltage between the source and drain reaches zero, the current flow stops.The AOD456 MOSFET is made up of three layers; a body, a gate, and a drain. The body acts as a barrier between the gate and the drain. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source. This causes current to flow between the source and the drain. The AOD456 has a very low on-resistance, meaning that it can handle large currents. The AOD456 also has a high off-resistance, which reduces energy loss due to power dissipation. This makes it an ideal choice for applications that require high current switching without causing significant power losses.

Application Areas

AOD456 MOSFETs are used in a wide array of applications, including:• Electric motors• UPS systems• Alternators• Lighting systems• Chargers and converters• DC/DC converters• Power supplies• Battery management• Solar systems• Automotive electronics• Telecommunication applications• Industrial controlsThe AOD456 MOSFET is ideal for high-current and high-voltage applications, due to its low on-resistance and high off-resistance. It is also widely used in low-power applications due to its low voltage drop and low power dissipation.

Conclusion

The AOD456 MOSFET is a well-suited device for power management and voltage regulation systems due to its low on-resistance and high off-resistance. It is an ideal choice for both high-voltage and high-current applications. Additionally, the AOD456 MOSFET is used in numerous applications, including electric motors, UPS systems, lighting systems, and telecommunication applications.

The specific data is subject to PDF, and the above content is for reference

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