| Allicdata Part #: | AOD4120-ND |
| Manufacturer Part#: |
AOD4120 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 20V 25A TO252 |
| More Detail: | N-Channel 20V 25A (Tc) 2.5W (Ta), 33W (Tc) Surface... |
| DataSheet: | AOD4120 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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<p>AOD4120 FET (field effect transistor) is a single, high-performance, high-purity metal-oxide-semiconductor (MOSFET). It is designed to provide excellent electrical performance in small size. This MOSFET is one of the most advanced and efficient FETs, making it ideal for a variety of applications in both commercial and industrial settings. In addition, the AOD4120 offers excellent value for money and is a highly reliable device with a long lifespan. </p><p>AOD4120 FETs have several different levels of drain current and drain-source voltage, which can be adjusted according to the specific application needs. Furthermore, they feature fast switching times, low gate-source capacitance and low drain-source resistance. These features make them ideal for use in power supplies, audio amplifiers, voltage regulators, and other high current applications. </p><p>The working principle of the AOD4120 FET is based on the principle of MOSFETs. MOSFETs use the flow of current between two electrodes, called the source and the drain. The conductivity between these two points is controlled by an electric field, which is applied to the gate and determines the resistance between the source and the drain. This resistance can be changed by adjusting the voltage applied to the gate, which then affects the flow of current between the two electrodes. </p><p>The AOD4120 FET is usually used in high power applications where high performance and speed is needed. It is also used in applications where current needs to be regulated accurately and precisely. This MOSFET is used in a wide range of applications, such as audio and automotive electronics, power supplies, voltage regulators, and other high current applications. </p><p>The AOD4120 FET is a reliable and efficient device that provides superior performance in both commercial and industrial applications. Moreover, this device has excellent thermal, electrical, and mechanical properties, making it a great choice for a variety of applications.</p>The specific data is subject to PDF, and the above content is for reference
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AOD4120 Datasheet/PDF