AOD4185L_DELTA Allicdata Electronics
Allicdata Part #:

AOD4185L_DELTA-ND

Manufacturer Part#:

AOD4185L_DELTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 40V TO252
More Detail:
DataSheet: AOD4185L_DELTA datasheetAOD4185L_DELTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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AOD4185L_DELTA is a high performance, low cost N-channel Enhancement-mode Vertical DMOS FET. It is manufactured using Planar-Vista technology which is power saving and highly reliable. This device has an extremely low on-state resistance which makes it suitable for very low voltage applications. This device is also suitable for high current applications such as DC-DC converters and switching applications.

The AOD4185L_DELTA features a symmetric and extremely low on-state resistance (RDS(ON) ). The symmetrical RDS(ON) eliminates the need to order specific parts from the manufacturer for various load and switching times. This feature enables the customers to use a standardized part for different applications without the need of ordering and stocking multiple part numbers. The low on-state resistance of the device reduces the power loss while in operation, leading to increased positioning in smaller components and higher efficiency.

The AOD4185L_DELTA is also designed with low input and output capacitance for faster switching. This allows it to meet the rising demand for high-speed and accuracy in field-related communication systems. Its low output capacitance means reduced input-output delays and improved switching speed. The device also utilizes a trench-gate structure which reduces the total gate charge and further reduces switching time.

The AOD4185L_DELTA is characterized by a low total gate charge, low gate-source voltage and gate-drain voltage. This results in reduced thermal stress and improved heat dissipation, thus making it reliable for a wide range of applications. The device is also designed with a limited back-gate voltage which helps prevents gate oxide damage and consequently lowers the need for frequent maintenance. It also has an excellent Avalanche characteristics, which helps prevent damage due to high transient current.

The AOD4185L_DELTA is ideal for high power applications such as DC-DC converters and motor control systems. It is designed for commercial and industrial applications in automotive, telecommunication, and consumer electronics. It is suitable for applications that require low gate charge and low gate plateau voltage. In addition, this device is suitable for automotive, audio or power supply applications where fast switching times are needed.

In terms of working principle, the AOD4185L_DELTA is an N-channel enhancement-mode Vertical DMOS FET which consists of three basic components – the source, gate and drain. Source and drain are connected to a power supply, while the gate is connected to a control voltage. When a control voltage is applied on the gate, an electric field is formed which causes electrons to flow from source to drain making it conductive. By varying the applied voltage, conduction between source and drain can be controlled. This makes it possible to switch the device on and off, making it suitable for power switching.

The specific data is subject to PDF, and the above content is for reference

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