Allicdata Part #: | AON6908A-ND |
Manufacturer Part#: |
AON6908A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 30V 11.5A/17A 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 11.5A, ... |
DataSheet: | AON6908A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A, 17A |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 15V |
Power - Max: | 1.9W, 2.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN (5x6) |
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The AON6908A is an array of 8 high-performance N-channel enhancement mode Field Effect Transistor (FET) devices, designed to meet the general power switching needs of battery-powered devices in industrial and digital applications. AON6908A is used to drive high loads with MHz switching frequencies while offering power savings and current boosting. It offers low on-resistance and low gate charge-drain charge leakage, reducing current consumption and heat dissipation.
The AON6908A is ideal for applications such as battery-powered mobile device chargers, industrial motor control, power factor correction, power supply design, as well as high-speed switching, active rectification, and other high power applications.
AON6908A is a compact and cost-effective solution that meets current switching needs in a wide range of electrical and electronic applications and eliminates the need for discrete power switches. It reduces development time for product designs, and guarantees low on-resistance, faster switching transitions, and improved power efficiency.
The AON6908A has a wide range of working voltages from 0 V to 20 V, a large output medium V threshold voltage, an on-resistance of 1.1 mΩ, and an avalanche energy of 8.6 mJ. It is also able to control various channels with fast switching speed and improved power efficiency. Its compact size also makes it perfect for space-constrained applications, such as those in portable battery-powered product designs.
The AON6908A works on a principle known as ‘enhancement mode’. In this mode, the gate voltage needs to be greater than the source voltage in order to turn the FET switch ‘on’. When a positive voltage is applied to the gate, the current can flow from the drain to the source, thereby allowing the device to switch. The flow of current is also regulated by the applied gate voltage, and once the gate voltage is removed, the current also stops flowing. When a voltage is applied across the source and the drain, current can flow in the opposite direction, turning the device ‘off’.
To ensure optimal performance, the AON6908A has several protection features built-in. It has both over- and under-voltage lockouts, over- and under-voltage monitoring, and thermal shutdown. Additionally, it is also capable of operating up to a maximum junction temperature of 125°C, and a maximum switching frequency of 20 MHz. This high performance, combined with its small size, makes the AON6908A an ideal choice for modern power switching applications.
The specific data is subject to PDF, and the above content is for reference
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