AON6405 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.6V @ 250µA
Package / Case:	8-PowerSMD, Flat Leads
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5500pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	105nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<h2>AON6405 Application Field and Working Principle</h2>AON6405 is a high-performance symmetrical N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by Alpha and Omega Semiconductor. It is a next-generation power device with a low on-resistance, a low reverse recovery charge, and a low threshold voltage allowing it to be applied in a wide range of voltage and current conditions.<h3>Description</h3>AON6405 is a high-performance symmetrical N-Channel MOSFET and uses a four-layer gate trench structure instead of the conventional two-layer layout, enabling much lower On-Resistance and total gate charge. It is built with a conventional Super Junction (SJ) MJ process and is suitable for applications that require high-current capability with low on-resistance. This MOSFET has an RDS(on) rating of 70mΩ and a maximum drain current of 4A, which allows it to be applied in high-frequency switching applications such as DC-DC converters, PWM regulators, and synchronous buck converters. This MOSFET is available in four different SO-8 packages, enabling a higher packing density, space saving, and less thermal resistance.<h3>Applications</h3>AON6405 is suitable for many applications in which space-saving and high power efficiency is required. It is commonly used in high-frequency switching applications such as switching power supply, DC-DC converters, PWM regulators and synchronous buck converters. It can also be used in forward mode PWM and synchronous rectifier applications due to its low threshold voltage, low drain-source ON-state resistance and low gate charge features, making it suitable for high-efficiency and power-sensitive applications.<h3>Features</h3>AON6405 is a high-performance, low-voltage, N-Channel MOSFET. It has a low on-resistance with a maximum rating of 70mΩ and a maximum drain current of 4A. It has a maximum drain-source voltage of 30V and a maximum junction temperature of 150°C, ensuring greater physical and operating temperature stability. It has a low gate-source threshold voltage rating of 0.75V which allows the MOSFET to be used in low voltage and high current applications. Additionally, it has a low reverse recovery charge and low gate charge making it suitable for high frequency switching applications. <h3>Working Principle</h3>A MOSFET is a type of transistor that works by modulating the electric field between the source and the drain terminals, allowing current to flow through it when a voltage is applied. AON6405 is a symmetrical N-Channel MOSFET and can be used to transform a low voltage and current into a high voltage and current.The operation of the MOSFET is based on the principle of conduction. When the gate voltage is applied, electrons in the silicon substrate are pulled towards the gate terminal and charged, creating a static electric field between the body and the gate. This electric field causes a depletion region to form at the junction between the gate and the body and modulates the electric field between the source and drain terminals. This electric field allows current to flow from the source to the drain when the gate voltage is applied.The gate terminal is insulated from the channel by a thin layer of oxide, which allows the electric charge to remain without dissipating. As the gate voltage is increased, the electric field between the source and the drain gets stronger and the MOSFET is turned "on". As the gate voltage is decreased, the electric field between the source and drain decreases and the MOSFET is turned "off".<h3>Conclusion</h3>The AON6405 is a next-generation power device with improved performance over conventional MOSFETs. It has a low on-resistance and low reverse recovery charge, making it suitable for high-frequency switching applications such as DC-DC converters, PWM regulators and synchronous buck converters. It also features an improved packing density and less thermal resistance, making it ideal for space-constrained designs.

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