| Allicdata Part #: | AON6484-ND |
| Manufacturer Part#: |
AON6484 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 100V 3.3A DFN5X6 |
| More Detail: | N-Channel 100V 3.3A (Ta), 12A (Tc) 2W (Ta), 25W (T... |
| DataSheet: |  AON6484 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 942pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 79 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta), 12A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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AON6484 is a single N-Channel enhancement mode, power Field-Effect Transistor (FET) specifically designed for low voltage switching and transmitting applications. It is a common component and is extensively used for a variety of purposes due to its small size and characteristics. Based on the AON6484 datasheet and specifications, this article will provide a detailed overview of the device\'s application field and working principle.
Application Field
The AON6484 is a power FET, hence it can be used in high-power switching and transmission applications. It is commonly found in power supply circuits, HVAC systems, audio and video equipment, automotive applications, household electronics, telecommunications, industrial control circuits, network systems, and more. AON6484 is designed to be particularly useful for low voltage switching applications. It comes with exceptional ESD protection, low gate voltage, low gate charge and low gate resistance, making it ideal for high-density power systems and low voltage applications. Additionally, it has a high-speed switching capability, built-in soft-slow turn-on function and reduced gate charge to reduce switching losses.Features and Specifications
The AON6484 is a single N-Channel enhancement mode, power FET. It has an ESD protection of up to 5 KV, which makes it suitable for use in wide range of environments and applications. Additionally, it has a low gate voltage of 4V and a low gate charge of less than 1.9nC. The device is available in two main package sizes; the TO-252-3 and TO-252-5 packages. In terms of electrical characteristics, the AON6484 has a breakdown voltage of 60 V and a drain-source voltage of 80 V. The device also has a threshold voltage of 2.5 V and a maximum drain current of 1.5 A. Furthermore, the device has a maximum drain-source on-state resistance of 160 mΩ and a maximum continuous current of 1.5 A.The device also has a maximum total turn-off time of 6 ns and a maximum total turn-on time of 6 ns. It has an operating temperature range of -55°C to 150°C and a maximum junction temperature of 175°C.Working Principle
The AON6484 is an N-Channel FET, meaning that it has an N-type channel connecting the drain to the source. When the gate voltage is low, the channel will be closed and the device will be off. It is also important to note that the device has an intrinsic Sub-threshold Swing (SS) of 25mV/Decade, which allows it to remain highly efficient while switching. When a positive gate bias is applied, the N-Channel will become conductive and allow current to pass through the gate and into the drain. The device will then enter an "on-state" and allow current to flow from the source to the drain. It is important to note that the gate voltage must be higher than the treshold voltage in order for the device to turn "on". The source and the drain of the device are connected to ground, so the drain current can be measured at the source directly. The device will remain in an "on-state" until the gate voltage is dropped to a value below the treshold voltage. The device will then enter an off-state and the drain current will stop flowing. In this off-state, no current flowing through the device.Conclusion
AON6484 is a single N-Channel FET device designed for low voltage switching and transmission applications. It has a low gate voltage of 4V and a low gate charge of less than 1.9nC. It comes with an ESD protection of up to 5 KV and is suitable for use in a number of environments and applications. The device has a treshold voltage of 2.5 V and a maximum drain current of 1.5 A. Additionally, the device has a maximum drain-source on-state resistance of 160 mΩ, a maximum continuous current of 1.5 A, a maximum total turn-off time of 6 ns and a maximum total turn-on time of 6 ns. It has an operating temperature range of -55°C to 150°C and a maximum junction temperature of 175°C. The working principle of AON6484 is based on the N-channel connecting the drain to the source. When the gate voltage is applied, the N-channel will become conductive and allow current to pass through the gate and into the drain. The device will then enter an "on-state" and allow current to flow from the source to the drain. Overall, the AON6484 is a useful device and is widely used in a variety of applications due to its small size, exceptional characteristics and excellent performance.The specific data is subject to PDF, and the above content is for reference
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