Allicdata Part #: | 785-1579-2-ND |
Manufacturer Part#: |
AON6534 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 20A DFN5X6 |
More Detail: | N-Channel 30V 20A (Ta), 30A (Tc) 4.1W (Ta), 25W (T... |
DataSheet: | AON6534 Datasheet/PDF |
Quantity: | 1000 |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 951pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 4.1W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
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AON6534 is a high-performance, low-power and small-size trench-gate metal-oxide-semiconductor field-effect transistor (MOSFET). With advanced trench structure and special manufacturing process, AON6534 is able to provide excellent performance and features such as low on-resistance, low power consumption, high performance, fast switching speed and so on. With its distinct advantages, AON6534 is widely applicable in various fields, from automotive industry to electric industry.
As one of advanced MOSFETs, AON6534 is widely used in automotive high-side and low-side switch applications. In electric vehicles, AON6534 is most commonly used for motor control, electric braking, and other applications where high current is needed. Additionally, AON6534 can be applied in the electric solar energy sector, military, lighting industry and various telecommunications systems.
In terms of its working principle, AON 6534 operates through a source electrode, gate electrode and drain electrode. The source of AON6534 is connected to the ground, while the gate is connected to a voltage source, and a current flow is created between the source and the drain. The electric field being generated between the gate and the drain will change the resistance between the drain and the source and control the current flowing through it. When the gate of the MOSFET receives a high-level voltage, the electric field is strong enough to attract the electrons in the channel, and a conduction path between the leakage and the source is formed. In this way, the current is allowed to flow, and the device is in the "on" state. On the other hand, when the voltage at the gate is low, the electric field is weak, and the electrons are repelled from the gate, so the current is cut off, and the device is in the "off" state.
The AON6534 MOSFET also has a high-speed switching capability. For high-speed switching applications, AON6534 provides low switching time, fast turn-off time, and low output capacitance. This high-speed switching capability makes AON6534 an ideal choice for high-frequency switching and pulse-width modulation applications.
In summary, AON6534 is a low-power, high-performance and small-sized MOSFET, and it is widely used in various fields. With its distinct advantages, AON5364 can be applied in automotive high-side and low-side switch applications, electric vehicles, electric solar energy, military and various telecommunications systems. In terms of its working principle, AON6534 operates through a source electrode, gate electrode and drain electrode, where the electric field being generated between the gate and the drain will change the resistance between the drain and the source and control the current flowing through it. Moreover, AON6534 also has a high-speed switching capability and can be used in high-frequency switching and pulse-width modulation applications.
The specific data is subject to PDF, and the above content is for reference
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