| Allicdata Part #: | 785-1342-2-ND |
| Manufacturer Part#: |
AON6416 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 30V 14A 8DFN |
| More Detail: | N-Channel 30V 14A (Ta), 22A (Tc) 2.4W (Ta), 31W (T... |
| DataSheet: | AON6416 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 31W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | SDMOS™ |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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AON6416 is a high voltage trench MOSFET technology that is ideal for automotive, industrial, and communications applications. It is developed with Eon Silicon Solution’s advanced trench MOSFET manufacturing technology and offers superior resistance to capacitive loads, low on-resistance, and improved lifetime. Furthermore, the low RDS(on) of this device decreases power consumption and increases system efficiency. The trench gate structure of this device also provides superior substrate immunity for efficient operation in noisy environments.
AON6416 devices are single-channel N-Channel MOSFETs that provide low-voltage, low-current solutions for power handling applications. This device is suitable in a wide range of applications, including switched-mode power supplies (SMPS), backlight control systems, power inverters, and other industrial control systems. It has a 20V blocking voltage and a low gate charge of 6nC, so it can easily handle high inrush currents. The AON6416 is designed for maximum reliability in applications that require energy saving and high-switching performance.
AON6416 devices are composed of a source, drain, and gate electrodes, which are isolated by a dielectric material. The source and drain electrodes act as current channels through which currents can move. When a voltage is applied to the gate electrode, it creates an electric field that changes the characteristics of the channel and alters the flow of current. By controlling the exchange of electrons between the source and drain electrodes, the transistor can be turned “on” and “off.”
AON6416 devices are used in both analog and digital circuit designs. In analog applications, they can be used to amplify and attenuate signals in amplifiers, filters, and oscillators. In digital applications, they can be used to control power or logic signals in logic gates and control systems. In both analog and digital applications, the device’s low on-resistance allows for efficient power handling and low power losses.
AON6416 devices are manufactured according to specific applications and requirements. They can be customized to meet a variety of electrical, thermal, and environmental specifications. They are tested for conformance with RoHS, de-su, and AECQ-1601 requirements, which ensures reliability, durability, and extended service life.
AON6416 devices are the ideal choice for automotive, industrial, and communications applications due to their low on-resistance, high reliability, and high energy efficiency. The device’s low gate charge and 20V blocking voltage make it suitable for applications that require high inrush currents. Additionally, the device’s trench gate structure provides excellent substrate immunity and reliability in noisy environments. In summary, the AON6416 is an excellent choice for power handling applications.
The specific data is subject to PDF, and the above content is for reference
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AON6416 Datasheet/PDF