AON6796

Vgs(th) (Max) @ Id:	1.9V @ 250µA
Package / Case:	8-PowerSMD, Flat Leads
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	6.2W (Ta), 31W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	SRFET™
Rds On (Max) @ Id, Vgs:	3.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The AON6796 is a Single-Channel N-Channel Enhancement Mode Field Effect Transistor (FET). This FET is part of a family of AON67xx products from Alpha and Omega Semiconductors, Inc. The AON6796 is a low-cost, high-performance device that provides a high level of reliability for designers in various applications. The AON6796 offers excellent switching performance at low power consumption, making it an ideal choice for power systems, RF amplifiers, and analog/digital circuits.The AON6796 is a Single-Channel N-Channel Enhancement Mode FET with an operating voltage of up to 65V and a maximum drain current of 360mA. It features a low gate-drain capacitance of 6.3pF and a low on-resistance of 63.2 Ohms which make it suitable for high-speed, low-power circuits. The small gate capacitance enables fast switching, making the AON6796 an ideal choice for switching circuits and power supplies.The AON6796 features an on-resistance of 63.2 Ohms, a gate threshold voltage of 1V, a gate-source voltage of 0.8V, and a maximum drain current of 360mA. It also features a maximum gate-drain capacitance of 6.3pF and a reverse transfer capacitance of 7.5pF. With a maximum junction temperature of 150°C and an avalanche energy rating of up to 7mJ, the AON6796 is able to handle high currents and voltages with minimum thermal damage.The AON6796 is mainly used in power and RF systems, where it delivers high performance and reliability. It can be used as a power switch, a load switch, a load switch, a linear regulator, or an amplifier. It is also suitable for logic-level conversion, pre-amplifier, and high-frequency and ultra-low power applications. The device’s small size, wide operating voltage range and low gate-drain capacitance make it ideal for applications where space is limited and power is scarce, such as automotive and military equipment.The AON6796 features an enhancement mode operation, which offers good ESD protection, failsafe on-state, and low turn-on voltage. Additionally, the on-resistance is highly frequency-dependent and varies from 75mOhms at 1KHz to 63.2mOhms at 2MHz. This frequency-dependent on-resistance helps limit noise, making the AON6796 ideal for audio and RF amplifier applications.The AON6796 has a variety of working principle characteristics including its low switching time, low gate-drain capacitance and low on-resistance which make it suitable for power and RF circuits. In addition, the device\'s low gate-drain capacitance enables fast switching, and the on-resistance is highly frequency-dependent, reducing noise and ensuring that the device will not suffer from excessive power dissipation. The high junction temperature rating of the AON6796 allows it to handle large currents and voltages without suffering any damage, and its reverse transfer capacitance allows it to quickly discharge currents when operated at frequencies higher than 1GHz.Overall, the AON6796 is an ideal choice for high performance and reliable power and RF systems. It features a low gate-drain capacitance, low on-resistance, high junction temperature rating, and fast switching speed, making it suitable for a wide range of applications. The AON6796 is an economical and reliable choice for designers who require precise control and power management for their systems.

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