AON6266_101 Allicdata Electronics
Allicdata Part #:

AON6266_101-ND

Manufacturer Part#:

AON6266_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CHANNEL 60V 30A 8DFN
More Detail: N-Channel 60V 30A (Tc) 38W (Tc) Surface Mount 8-DF...
DataSheet: AON6266_101 datasheetAON6266_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AON6266_101 is an advanced process model in the advanced orthogonal-channel (AOT) architecture for low voltage, low power, and single-gate MOSFETs. This device is primarily intended for battery-operated portable applications requiring low on-resistance, high switching performance, and high power savings, and is also suitable for many other applications such as converting, amplifying, and displaying analog signals. AON6266_101 employs a leading edge process to provide extra-high performance and low power dissipation while still providing reasonable on-resistance and low leakage current.

The AON6266_101 includes three terminals - the source, drain, and gate - and provides a simple, low-cost single-gate MOSFET. This device is specifically to achieve low voltage, low power, and high switching performance. The gate voltage is regulated by a voltage divider, allowing the threshold voltage to be held constant while the gate is activated. The drain-source on-resistance (Rds) is relatively low, and the device has a high-frequency gate drive capability. This allows for extremely fast switching, making it ideal for applications where speed is paramount.

In terms of working principle, AON6266_101 operates under the same concept as conventional MOSFETs. When the gate voltage is increased, the drain current can flow. This is due to the formation of a channel between the gate and the source-drain, through which the electrons can move. The Rds is low, allowing the electrons to move quickly, resulting in a high switching performance.

AON6266_101 has many advantages over other types of MOSFETs in terms of its design, current flow, and power-saving capabilities. First, AON6266_101 has a low on-resistance, resulting in high switching performance and low leakage current. Second, it has a high drive current capability, allowing for faster switching. Third, AON6266_101 has a high current gain, which allows for a larger operating range. Finally, this MOSFET has is capable of very low power dissipation, making it ideal for battery-operated applications.

The AON6266_101 is ideal for use in a number of applications, such as converting, amplifying, and displaying analog signals. It is also well-suited to be used in portable battery-operated applications which require low on-resistance, high switching performance, and reduced power consumption. Furthermore, this device can be used in many other applications including switching, memory, computing, and consumer electronics products.

In conclusion, the AON6266_101 is an ideal choice for applications that require low voltage, low power, and high switching performance. It is also suitable for a variety of other applications, including switching, memory, computing, and consumer electronics products. And due to its low on-resistance and high drive current capability, this device offers Excellent switching performance and reduced power consumption.

The specific data is subject to PDF, and the above content is for reference

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