![AON6266_101 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | AON6266_101-ND |
Manufacturer Part#: |
AON6266_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CHANNEL 60V 30A 8DFN |
More Detail: | N-Channel 60V 30A (Tc) 38W (Tc) Surface Mount 8-DF... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1340pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AON6266_101 is an advanced process model in the advanced orthogonal-channel (AOT) architecture for low voltage, low power, and single-gate MOSFETs. This device is primarily intended for battery-operated portable applications requiring low on-resistance, high switching performance, and high power savings, and is also suitable for many other applications such as converting, amplifying, and displaying analog signals. AON6266_101 employs a leading edge process to provide extra-high performance and low power dissipation while still providing reasonable on-resistance and low leakage current.
The AON6266_101 includes three terminals - the source, drain, and gate - and provides a simple, low-cost single-gate MOSFET. This device is specifically to achieve low voltage, low power, and high switching performance. The gate voltage is regulated by a voltage divider, allowing the threshold voltage to be held constant while the gate is activated. The drain-source on-resistance (Rds) is relatively low, and the device has a high-frequency gate drive capability. This allows for extremely fast switching, making it ideal for applications where speed is paramount.
In terms of working principle, AON6266_101 operates under the same concept as conventional MOSFETs. When the gate voltage is increased, the drain current can flow. This is due to the formation of a channel between the gate and the source-drain, through which the electrons can move. The Rds is low, allowing the electrons to move quickly, resulting in a high switching performance.
AON6266_101 has many advantages over other types of MOSFETs in terms of its design, current flow, and power-saving capabilities. First, AON6266_101 has a low on-resistance, resulting in high switching performance and low leakage current. Second, it has a high drive current capability, allowing for faster switching. Third, AON6266_101 has a high current gain, which allows for a larger operating range. Finally, this MOSFET has is capable of very low power dissipation, making it ideal for battery-operated applications.
The AON6266_101 is ideal for use in a number of applications, such as converting, amplifying, and displaying analog signals. It is also well-suited to be used in portable battery-operated applications which require low on-resistance, high switching performance, and reduced power consumption. Furthermore, this device can be used in many other applications including switching, memory, computing, and consumer electronics products.
In conclusion, the AON6266_101 is an ideal choice for applications that require low voltage, low power, and high switching performance. It is also suitable for a variety of other applications, including switching, memory, computing, and consumer electronics products. And due to its low on-resistance and high drive current capability, this device offers Excellent switching performance and reduced power consumption.
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