AON6928

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AON6928 is a special three-dimensional integrated N-channel MOSFET array produced by Advanced Semiconductor. It consists of 16 (1.2V-3.8V) transistors and 16 high voltage source terminals. It has a single power source and can provide four independent gate control signals for each MOSFET. The AON6928 has a total maximum rating of 19A, 5V and is rated for a maximum power dissipation of 2.0W.

AON6928 is mainly applied in DC-DC power conversion, smart power modules, solar power electronic applications, etc. In those applications, the device can be used as a switching device that can quickly switch power in devices such as phone chargers, radio receivers and audio amplifiers. In addition, it is widely used in applications that require rapid voltage regulation or current limiting.

The working principle of AON6928 is based on the property of MOSFETs to control large currents by applying gate voltages grounded to the source. The AON6928 provides four independent gate control signals for each MOSFET to achieve power management, current limiting and quick switching function. When a gate control signal is applied to the device, it will turn on and the specific MOSFET will conduct current. When the gate control signal is removed, the MOSFET will immediately turn off and no current will flow.

AON6928 is designed to provide excellent performance in both current conduction and switching applications. It has a low parasitic capacitance gate structure, which ensures low power consumption and fast switching speed. It also has a high resistance insulation layer and the MOSFET array is arranged at right angles that reduces the chance of electrical noise. In addition, the device has a low temperature coefficient and self-balancing temperature that provides high reliability.

In short, AON6928 is a three-dimensional integrated N-channel MOSFET array that provides high current and switching speed and can be used in many applications such as DC-DC power conversion, smart power modules and solar power electronic applications. The device has good stability and high reliability due to its low parasitic capacitance gate structure, high resistance insulation layer and self-balancing temperature.

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