AON6971

Series:	SRFET™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	23A, 40A
Rds On (Max) @ Id, Vgs:	5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1010pF @ 15V
Power - Max:	5W, 4.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-DFN-EP (5x6)

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AON6971 Application Field and Working Principle

The AON6971 is an array of floating gate transistors suitable for use in a variety of applications. This device is a non-volatile memory (NVM) element, based on the transistor floating gate model of NVM. An array of AON6971 transistors can be interrogated, programmed, and erased at will, allowing the device to be used in a range of memory-based applications. This device is ideal for use in a variety of applications such as small-size memory components, intelligent embedded systems and other server applications. Furthermore, the AON6971 provides programmability and reprogrammability, allowing users to change the device\'s settings as needed. The AON6971 operates on the same principle as other floating gate transistors, in that a positive voltage is applied to the gate of the transistor to program it. This process is also known as hot electron write. The positive voltage causes electrons to tunnel through the thin gate oxide layer and become trapped in the floating gate of the transistor. This creates a charge difference between the two gates of the transistor, thereby making the transistor conductive. To erase the program on the AON6971, a reverse charge is applied to the gate of the transistor. This reverses the tunneling process, causing the electrons to be released from the floating gate and return to their original positions. This method, referred to as Fowler-Nordheim tunneling, restores the transistor\'s original state. The AON6971 is a high-performance variation of this type of transistor. It offers a wide range of features, including improved programming and erasing speed, higher switching speeds, and enhanced radiation and voltage tolerance. This makes it suitable for a range of applications, including memory components, embedded systems and portable applications. In addition to its applications as a memory element, the AON6971 also has a number of other applications. It is regularly used as a switch in Power Management Integrated Circuits (PMICs). It can also be used in dynamic logic gates, where it can be used to program logic states. Furthermore, the AON6971 can be used to build a self-programmable read-only memory (SPROM), allowing for the programming of certain data types. In summary, the AON6971 is a floating gate transistor array suitable for a variety of applications. It can be used as a memory element, switch, dynamic logic gate, and SPROM. The device is highly programmable and reprogrammable, with enhanced radiation and voltage tolerance. This makes it ideal for use in small-size memory components, embedded systems, portable applications and other server applications.

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