AON6994

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	19A, 26A
Rds On (Max) @ Id, Vgs:	5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	820pF @ 15V
Power - Max:	3.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-DFN-EP (5x6)

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The AON6994 is a powerful programmable array that offers integrated electrostatic-discharge (ESD) protection. It is a dual-channel, n-type metal-oxide-semiconductor field-effect transistor (MOSFET) array that features both drain and source ESD protection. This device is ideal for applications that require both input and output protection, and it provides an attractive cost to performance ratio.The AON6994 is configured as an IC package that includes six MOSFETs that are connected in a dual-channel configuration. The gate and drain terminals of each device are connected externally, and there is no separate gate drive needed. The device has high performance, low on-resistance, and a wide operating voltage range. It is also capable of providing up to 6.5A of current and it can withstand voltage spikes of up to 2.5kV. This combination of features makes the AON6994 an excellent choice for applications such as renewable energy, automotive, and telecommunications.The working principle of the AON6994 is similar to that of other MOSFETs. The array includes an already integrated gate and drain regions, which are protected with an n-type well and source/body contacts. This device is composed of three parts, the gate, drain, and source. The gate region is the control terminal for the device: the drain and source are the two output terminals and are used to transfer the current from one part of the circuit to the other. The current flow between the gate and the source and drain is managed by the applied voltages, which are determined by the input signals.When a voltage signal is applied to the gate, the gate-source capacitance of the device is charged. This charge is transferred through the depletion region to the source and drain regions. When the gate voltage is sufficiently high, the device will be ‘on’ and the current will flow. The device will be in the ‘off’ state when the voltage applied signal is at or below the threshold voltage.The AON6994 is a versatile MOSFET array that enables the implementation of various applications, including renewable energy, automotive, and telecommunications. Its wide operating voltage range, high performance, and low on-resistance make it an ideal solution for these applications. The device also comes with integrated ESD protection and requires no separate gate drive, making it an attractive choice for designers integrating it into their systems. The AON6994 is a powerful and cost effective solution for applications that require both input and output protection.

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