| Allicdata Part #: | APT12M80B-ND |
| Manufacturer Part#: |
APT12M80B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 800V 13A TO-247 |
| More Detail: | N-Channel 800V 13A (Tc) 335W (Tc) Through Hole TO-... |
| DataSheet: | APT12M80B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 335W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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APT12M80B is a kind of power MOSFET,1 which belongs to the family of FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The single MOSFET of APT12M80B series operates in the standard N-Channel mode and is very popular as an energy-saving device.
The APT12M80B MOSFET offers superior performance in its application. It has a very low on-resistance rating of 10 milliohms (mΩ),2 and it can handle up to 12 amps of peak current. It also has a very low gate threshold voltage of 1.9V and it can operate at a temperature range of -55 to 175 degrees Celsius. It is also very efficient, with a switching speed of 2.2 nanoseconds and an Rth, case to drain steady state thermal resistance of 2.3 K/W.
The working principle of the APT12M80B is based on the physics of a MOSFET. When voltage is applied to the gate, the electric field created by the voltage causes electrons to be attracted to the gate and away from the drain and source. This creates a depletion region in the semiconducting channel, which controlled the current flowing between the source and the drain. This process is what allows the APT12M80B to perform as a switch. The change in voltage between the gate and the source can control the current flow in the semiconductor channel, allowing the circuit to be adjusted for efficiency and reliability.
The APT12M80B is commonly used in power supply circuits, as it can efficiently and reliably reduce voltage fluctuations. It is also used in audio amplifiers, as it can provide high-power linear amplification with no distortion. It can also be used in microprocessors and other electronic circuits, as it offers high-speed switching for fast and accurate processing.
The applications of the APT12M80B are many and varied, making it a popular choice for many purposes. Its low on-resistance rating and its low gate threshold voltage make it a very efficient and reliable device. Its low Rth, case to drain steady state thermal resistance also makes it a very good choice for power circuitry, as its low heat output ensures that the circuit won’t overheat. And its fast switching speeds make it a preferred choice for digital processing. With its myriad of advantageous features and its ability to perform in a variety of roles, the APT12M80B is the ideal choice for power supply and audio amplification purposes.
The specific data is subject to PDF, and the above content is for reference
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APT12M80B Datasheet/PDF