APT130SM70B

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The APT130SM70B is a fast switching enhancement mode, N-Channel MOSFET that enhances the performance and speed of a wide range of electronic applications. It offers significant advantages over competing products in terms of frequency, efficiency, and power losses. Moreover, the characteristics of APT130SM70B make it an excellent choice for use in high speed, high power, and high efficiency designs.

The APT130SM70B’s application field consists of power conversion, DC – DC, DC – AC, and AC – DC applications, as well as in radio frequency (RF), high-voltage, and current limited circuits. Its range of application can include controlling of small DC motors, voltage regulation, and battery charage protection, to name a few. Furthermore, the small size and the hermetically sealed package enable the APT130SM70B to be used in space-constrained environments.

The working principle of APT130SM70B is defined by its operation in the region of Enhancement Mode. In this mode, an N-Channel MOSFET is combined with a low voltage drain source voltage (VDS) and incident gate voltage (VGS). Whereas, VGS controls the current flowing inside the device, VDS sets the level of voltage applied across the MOSFET, thus driving it into or out of conduction.

The APT130SM70B MOSFET is also equipped with an optimum threshold or built-in back gate bias, known as “RDS.” RDS sets the level at which VGS must be applied to guarantee the desired optmum conductivity. Furthermore, low gate charge (QG) can guarantee the minimized delay time that allows the MOSFET to switch in the shortest possible time. Finally, an integral source-body diode is included in each die to prevent hot-carrier injection.

The APT130SM70B is an ideal choice for any design that requires enhanced performance, better efficiency, and ultra-low losses. It is available in both through-hole and surface-mount packages and can be used in several applications. With its integrated MOSFETs, it is well-positioned in the market due to its superior performance and low cost.

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