APT30M19JVR

Vgs(th) (Max) @ Id:	4V @ 5mA
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	ISOTOP®
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	21600pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	975nC @ 10V
Series:	POWER MOS V®
Rds On (Max) @ Id, Vgs:	19 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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APT30M19JVR Application Field and Working Principle

The APT30M19JVR is a 30A, 200V fast switching MOSFET from Advanced Power. It is a single P-channel MOSFET which is designed for various power conversion applications, and offers improved performance over standard P-channel FETs. This article will discuss the application areas of the APT30M19JVR and provide a brief overview of its working principle.

Application Areas

The APT30M19JVR is most commonly used in power supply applications. Its low Vth and fast switching speeds make it ideal for High Frequency DC/DC converters and AC/DC converters. The device is also suitable for use in Point of Load converters and DC/AC inverters. Additionally, the APT30M19JVR can also be used in motor control applications to reduce power losses and realize power savings.

Working Principle

The APT30M19JVR is an enhancement mode MOSFET, meaning it requires a gate voltage to turn the device on. This gate voltage (VGS) is applied to the gate of the MOSFET, creating an electric field which drives the channel electrons into the channel and creates a conductive path between the drain and source terminals. When the voltage applied to the gate exceeds the threshold voltage of the device (Vth), current can flow through the device. When the current flow is increased, the device begins to enter the saturation region of operation. This is where the device will be in its most efficient mode of operation. In this mode, current flows through the channel rapidly and a robust conductive path is created between the drain and source terminals. The device remains in the saturation region until the current through the channel begins to decrease and the voltage applied to the gate (VGS) decreases below the threshold voltage. This causes the device to enter the cut-off region, where the device is blocked from conducting current and the conductive path between the drain and source terminals is broken.

Conclusion

The APT30M19JVR is a fast switching MOSFET from Advanced Power which is typically used in various power conversion applications. It offers improved performance over standard P-channel FETs and can be used in DC/DC converters, AC/DC converters, Point of Load converters and DC/AC inverters, as well as in motor control applications. The working principle of the APT30M19JVR is based on an enhancement mode MOSFET, meaning that a gate voltage is required to turn the device on and current flows through a conductive path between the drain and source terminals when the voltage applied to the gate exceeds the device\'s threshold voltage. When the current through the device begins to decreased, the device enter the cut-off region and the conductive path is broken.

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