| Allicdata Part #: | APT34M60B-ND |
| Manufacturer Part#: |
APT34M60B |
| Price: | $ 8.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 600V 36A TO-247 |
| More Detail: | N-Channel 600V 36A (Tc) 624W (Tc) Through Hole TO-... |
| DataSheet: | APT34M60B Datasheet/PDF |
| Quantity: | 1000 |
| 60 +: | $ 8.16179 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 624W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6640pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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APT34M60B is an N-channel enhancement-mode field-effect transistor (MOSFET) which is a type of semiconductor technology used for switching or amplifying electronic signals. Developed by the Japanese electronics manufacturer Hitachi, the family of MOSFETs are designed to achieve higher system performance and is a great choice for use in power management applications. The APT34M60B has high drain current capabilities, meaning that it can switch large amounts of current, making it suitable for direct drive of power devices. Its low on-state resistance, combined with the low gate threshold voltage, makes the APT34M60B ideal for buck converters, which require precise control of the output current. The MOSFET also provides high input impedance, allowing devices to draw less current, and its fast switching time means that it can handle high-speed switching applications.
The APT34M60B has two important parameters which determine its operation, the VGS and the drain-to-source voltage (VDS). The VGS is the gate-to-source voltage, and is used to control the MOSFET\'s current-carrying channel. When the VGS is applied, the MOSFET enters the \'on\' state and current can flow through it. When the VGS is removed, the MOSFET returns to the \'off\' state and current cannot flow. The drain-to-source voltage (VDS) is the voltage between the drain and source terminals of the MOSFET, and is also used to control the current-carrying channel. When this voltage is applied, current can flow through the MOSFET. The APT34M60B has a VDS of -55v, meaning that it is suitable for applications which require high-voltage switching.
In terms of applications, the APT34M60B is most commonly used in power management applications. It is used in DC-DC converters that switch between DC voltage levels, and it is also used in DC-AC inverters that convert DC input to AC output. The switching capability of the MOSFET makes it suitable for applications such as AC motors and high-voltage power applications. The MOSFET can also be used in high-current applications such as battery chargers, where its fast switching time and low on-state resistance are beneficial.
In summary, the APT34M60B is an N-channel enhancement-mode field-effect transistor that is used in power management applications such as DC-DC converters, DC-AC inverters, AC motors and high-voltage power applications. It is capable of handling high currents, and its low on-state resistance and fast switching time make it suitable for applications which requires precise control of the output current. The MOSFET can also be used in high-current applications such as battery chargers. As such, the APT34M60B is an ideal choice for use in power management systems where high performance and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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APT34M60B Datasheet/PDF