| Allicdata Part #: | APT34F100B2-ND |
| Manufacturer Part#: |
APT34F100B2 |
| Price: | $ 15.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 1000V 35A T-MAX |
| More Detail: | N-Channel 1000V 35A (Tc) 1135W (Tc) Through Hole T... |
| DataSheet: | APT34F100B2 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 13.96980 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | TO-247-3 Variant |
| Supplier Device Package: | T-MAX™ [B2] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1135W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9835pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 305nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The APT34F100B2 is a commonly used Single N Channel Enhancement MOSFET (Metal Oxide Semiconductor Field-effect Transistor). This specific device has an TO−92 (Tab down) package. It is designed for general purpose switching applications. The APT34F100B2 is crafted using the latest advances in MOSFET technology and its structure allows it to be ideal for applications which require low gate drive power, low on-resistance, and fast switching times.
A Metal Oxide Semiconductor Field-effect Transistor is a type of transistor that utilizes a conducting channel between the source and drain electrodes. The gate voltage determines the thickness of the channel and the current flowing through it. This is why it is often referred to as a voltage-controlled device. When a voltage is applied to the gate of a MOSFET, it attracts mobile charge carriers, which change the electrical conductivity of the channel. This allows for the MOSFET to be used for switching and amplifying electrical signals.
The APT34F100B2 specifically is a high-performance N-channel MOSFET transistor. The device utilizes the latest high-field chemistry to provide an increase in drain current and a decrease in on-resistance. This device has a drain-source breakdown voltage of 100V and it can handle 10V gate-source voltage. It is suitable for use with a variety of logic and analog circuits.
One of the main application fields of the APT34F100B2 is motor control. It can be used in motor-control applications such as variable speed drives, fan controllers, and AC motor control systems. This is due to the device’s capability to operate at very high frequencies (up to 20MHz). Applications such as these require fast switching times and high on-resistance to ensure proper functionality. The APT34F100B2 is capable of providing this level of performance.
In addition to motor control, the APT34F100B2 is also suitable for use in a wide range of switching applications. It is often used in electronic designs as a switching component, controlling the electronic signals that flow through it. Like other MOSFETs, the APT34F100B2 can be used as a power switch in automotive and industrial applications. It is also used in LED lighting applications and battery-management circuits.
The APT34F100B2 is an excellent choice for a variety of designs due to its high levels of performance, low on-resistance, and fast switching time. The device is often used in circuit designs for motor control, power switching, and other logic and analog applications. This makes it a valuable component for a variety of projects. With the help of its features, the APT34F100B2 makes it possible to design circuits that are both reliable and efficient.
The specific data is subject to PDF, and the above content is for reference
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APT34F100B2 Datasheet/PDF