| Allicdata Part #: | APT38M50J-ND |
| Manufacturer Part#: |
APT38M50J |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 500V 38A ISOTOP |
| More Detail: | N-Channel 500V 38A (Tc) 357W (Tc) Chassis Mount IS... |
| DataSheet: |  APT38M50J Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP® |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 357W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 28A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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APT38M50J is a Field Effect Transistor (FET) from the APT family manufactured by APT Technologies. It is a PowerMOSFET for which the maximum voltage rating is 500V and the drain current is 38A in the design. The device is enclosed in a Standard TO-220 package and has a copper clip for improved thermal resistance.This component is used for switching and amplifying electronic signals. It is also used for controlling current in a circuit, making it well-suited for high-power switching applications. It can be used in a wide range of applications including power supplies, DC-DC converters, motor control, and UPS systems.The APT38M50J is a single n-channel MOSFET. The device has three terminals, gate, source and drain. When a positive voltage is applied to the gate terminal, a voltage-controlled \'on-state\' is turned on and the device will pass current from source to drain. When the voltage at the gate terminal is reduced to zero the device will turn off.Also, the APT38M50J has an RDS(on) rating of 0.006ohm. This means that when the device is turned on, the resistance between the source and drain is just 6 milliohms. As a result, there is less power wasted as heat in the device, allowing the transistor to pass more power than standard MOSFETs.Finally, the APT38M50J device contains a built-in back-to-back body diode, which has the ability to carry high currents up to half an amp or more. This protection circuit helps to protect the MOSFET against high voltage transient events, reducing the chances of device failure.Overall, the APT38M50J is an ideal choice for applications that require reliability, high power switching, and improved thermal resistance. It has low on-resistance, making it suitable for high-current applications. Additionally, its built-in body diode gives it added protection, making it more reliable.
The specific data is subject to PDF, and the above content is for reference
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