Allicdata Part #: | IRAUIRFSL8405-ND |
Manufacturer Part#: |
AUIRFSL8405 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 120A TO262 |
More Detail: | N-Channel 40V 120A (Tc) 163W (Tc) Through Hole TO-... |
DataSheet: | AUIRFSL8405 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 163W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5193pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 161nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFSL8405 is a type of insulated-gate field-effect transistor (IGFET) that is used in a number of different applications. It is a single type of FET device single, and works by using a gate electrode to control the flow of charge between the drain and source electrodes. This type of transistor is also referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET).
The AUIRFSL8405 is a high-performance N-channel MOSFET, which is capable of providing optimal performance in a variety of applications. This type of MOSFET is a particularly versatile device and can be used in a range of applications such as high frequency switching and power conversion, high-side switching, mobile device power management, precision current sensing, and linear voltage regulation. Some of the key features of this device include low on-resistance, high channel isolation, low gate threshold voltage (Vgs), fast switching speed, and protection against electrostatic discharge (ESD).
The working principle of the AUIRFSL8405 is based on the capacitive coupling between the gate and drain terminals. When a voltage is applied at the gate terminal, it will cause the electrostatic field to increase, which in turn increases the capacitance between the gate and drain. This increase in capacitance will create a current that is proportional to the gate voltage, and this current is then passed through the MOSFET, from the drain to the source. As the gate voltage increases, the amount of current that passes through the MOSFET increases as well. The amount of current that is passed through the device is then limited by the gate resistance. This effect is known as the “channel-length modulation” of the MOSFET.
The AUIRFSL8405 MOSFET is a versatile transistor that can be used in a wide range of applications due to its robust capabilities. It is capable of delivering high switching speeds, low gate threshold voltages, and high channel isolation. It is also capable of providing protection against electrostatic discharge. The AUIRFSL8405 is particularly suitable for applications that require precision current sensing, high frequency switching and power conversion, high-side switching, and mobile device power management. This device can be used to replace more traditional discrete transistors in a range of applications, providing improved performance and cost savings.
The specific data is subject to PDF, and the above content is for reference
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