Allicdata Part #: | AUIRFP4110-ND |
Manufacturer Part#: |
AUIRFP4110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 120A TO247 |
More Detail: | N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO... |
DataSheet: | AUIRFP4110 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 370W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9620pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFP4110 is a P-Channel MOSFET device designed primarily as an ESD protection solution for sensitive logic systems. It is capable of operating in a range of -20V to -100V and with Rds(on) of 0.095Ω. Despite relatively low voltages and current, the device can handle up to 1.5A of flow with an average on-state drain-source resistance of just 0.095 ohms.
The AUIRFP4110 is well suited for multiple applications where heavy duty ESD protection is a must. With its high energy absorption and low on-resistance, it is ideal for battery applications, such as mobile phones and tablets, as well as consumer electronics and medical devices in which reliability and durability are critical. The AUIRFP4110 is also ideal for automotive and industrial applications, where ESD protection is a must to ensure safe, reliable operation of the system.
The AUIRFP4110 works using the principle of depletion-mode MOSFET. A depletion-mode MOSFET will behave as an “on” switch in the off state and a “low” switch in the on state. This process is repeated when the gate voltage increases, allowing the MOSFET drain-source voltage remains below the gate-source breakdown voltage. When the gate voltage drops, the MOSFET switches off and the drain-source voltage increases above the gate-source breakdown voltage, physically limiting the source voltage.
When operating under normal conditions, the MOSFET will open with a slow gate-source transition, providing an excellent and fully-controlled on-off transition. This ensures the integrity of the system is maintained and helps minimize unintentional switching. When the MOSFET is suddenly exposed to high voltages, such as those caused by ESD, the device has provided a much faster transition, which limits energy discharge and voltage. By controlling the on-off state, the device can also prevent electrical overstress.
The AUIRFP4110 is ideal for long-term ESD protection due to its ultra-low on-resistance and high energy absorption capability. It is a highly reliable device with minimal voltage performance degradation over its lifetime and can withstand up to 100V of ESD. Additionally, the device provides excellent EMI (electromagnetic interference) protection, ensuring the system remains reliable and secure. Because of its low on-resistance and small package size, the AUIRFP4110 is also an excellent choice for miniaturized applications.
The AUIRFP4110 is an excellent MOSFET device capable of providing reliable and durable ESD protection to logic systems. With its ultra-low on-resistance, high energy absorption capability, and low voltage degradation over its lifetime, it is ideal for a wide range of applications, such as battery-powered devices, consumer electronics, medical devices, automotive, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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