Allicdata Part #: | AUIRF3710ZSTRL-ND |
Manufacturer Part#: |
AUIRF3710ZSTRL |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 59A D2PAK |
More Detail: | N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2... |
DataSheet: | AUIRF3710ZSTRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.12536 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRF3710ZSTRL is a low-voltage, low-power, single-channel, self-biased, highly reliable, advanced power MOSFET from Vishay. It is designed to handle both DC and pulsed loads that meet the current and voltage requirements of a wide range of applications.
The AUIRF3710ZSTRL is a depletion-mode metal-oxide-semiconductor field-effect-transistor (MOSFET) and is rated to handle voltages up to 100 volts and currents up to 15 amps. It is composed of n-type material, which is a combination of a metal and some type of semiconductor material. It has a threshold voltage of 2.0 volts and a maximum total gate charge of 28 nano-Coulombs. The AUIRF3710ZSTRL is a dedicated logic-controlled device, meaning that the gate voltage is either off or on, without the need for any additional control signals.
The applications of the AUIRF3710ZSTRL MOSFET include audio equipment, power converters, motor controllers, and lighting control. It is extremely well suited for precision control systems due to its low power consumption and high reliability. Additionally, its low voltage operation makes it an ideal choice for applications that require very low signals, such as data acquisition and signal processing systems.
A unique feature of the AUIRF3710ZSTRL MOSFET is its self-biasing design, meaning that it does not require gate voltage for operation. This feature is useful in applications that require a low level of power consumption such as low-power motor controllers and low-voltage power converters. It also allows designers to reduce the number of external components used in the system, resulting in fewer design points and improved overall performance.
The working principle of the AUIRF3710ZSTRL MOSFET is based on its n-type material. When a positive voltage is applied to the gate, an electric field is created which attracts electrons from the negative end of the circuit to bridge the gap between the MOSFET’s semiconductor layers. This causes a current to flow from the source to the drain, allowing current to pass through the circuit. The magnitude of this current is controlled by the voltage applied to the gate.
In summary, the AUIRF3710ZSTRL MOSFET is a low-voltage, low-power, single-channel, self-biased, advanced power MOSFET designed for a wide range of applications. Its unique self-biasing design reduces the number of external components required and its low threshold voltage makes it suitable for applications that require very low signals. The working principle of the AUIRF3710ZSTRL rests on its n-type construction, which allows current to pass through the circuit when a positive voltage is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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