Allicdata Part #: | AUIRFS4115-ND |
Manufacturer Part#: |
AUIRFS4115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 99A D2PAK |
More Detail: | N-Channel 150V 99A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS4115 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Base Part Number: | IRFS4115 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
Vgs (Max): | ±20V |
Series: | HEXFET® |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 12.1 mOhm @ 62A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 99A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFS4115 is a single-gate enhancement MOSFET manufactured by International Rectifier Corporation. It is a 3-terminal, symmetrical N-channel MOSFET that can provide high-efficiency power conversion and system protection. The device is designed to withstand a drain-source voltage of up to 400V and can provide a current capability of up to 2A. In addition, the AUIRFS4115 provides a low situation resistance and low gate drive power loss, making it an ideal choice for a wide range of applications.
The AUIRFS4115 is a very versatile MOSFET and is suitable for a variety of applications. It can be used in industrial power supplies, LED lighting, HVAC Systems, motor control, telecom and data center infrastructure, and automotive applications. In addition, it can be used for applications such as small-signal MOSFETs, high and low side switches, level shifters, and gate drivers. The AUIRFS4115’s high-power capability and low On resistance makes it an ideal solution for high-power switching and power conversion applications.
The main purpose of the AUIRFS4115 is to provide a high-efficiency power conversion, system protection, and low-voltage operation. This is achieved by its single MOSFET structure and symmetrical N-channel. The N-channel allows the device to provide a very low On resistance, which can be as low as 4.2mΩ in an RDSon package. This low resistance helps to reduce power losses, which means that the overall power loss is minimized. In addition, the single MOSFET structure ensures that the device can be operated at lower voltage levels, which makes it suitable for applications that require low-voltage operation. The single MOSFET also ensures maximum efficiency and robustness.
The AUIRFS4115 also features a low gate drive power requirement. This is achieved through its symmetrical N-channel design. The symmetrical N-channel design enables the device to be driven with a low gate drive voltage. This is especially beneficial for applications such as high and low side switches, level shifters, and gate drivers. It also ensures maximum system efficiency and robustness.
The AUIRFS4115 is manufactured using the latest manufacturing processes and is put through a rigorous quality-control process. Its high quality makes it an ideal solution for applications where system safety and reliability are essential. In addition, the device is RoHS compliant, which means that it has been tested and certified to meet the current requirements of the RoHS Directive.
The AUIRFS4115 is a versatile single-gate enhancement MOSFET with low On resistance and a low gate drive power requirement. It is suitable for a wide range of applications, including industrial power supplies, LED lighting, HVAC systems, motor control, telecom and data center infrastructure, and automotive applications. In addition, it features a high-power capability and robust design and is RoHS compliant. As such, it is an ideal solution for providing a high-efficiency power conversion, system protection, and low-voltage operation.
The specific data is subject to PDF, and the above content is for reference
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