Allicdata Part #: | AUIRLSL3036-ND |
Manufacturer Part#: |
AUIRLSL3036 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 270A TO262 |
More Detail: | N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-... |
DataSheet: | AUIRLSL3036 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 380W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11210pF @ 50V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 165A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AUIRLSL3036 is a semiconductor electronic component classified as a field-effect transistor (FET). In particular, it is a type of metal-oxide-semiconductor FET (MOSFET) and is a single device; there is no separate gate or source. This article discusses the applications and the working principle of the AUIRLSL3036.
The AUIRLSL3036 can be used in a variety of applications that require current or voltage conduction. It is often used in audio amplifiers, where it increases voltage gain, and in switches, where it regulates the flow of current. It can also be used in circuits that require fast switching because it is capable of switching within nanoseconds. Furthermore, the AUIRLSL3036 can be used in circuits that have challenging conditions where a low gate capacitance, low on-resistance, and low gate charge are required, such as in high speed logic circuits.
The working principle of the AUIRLSL3036 is based on its physical structure. The device consists of three layers of semiconductor materials stacked on top of each other. The top layer is composed of a metal material, the middle layer is composed of an oxide, and the bottom layer is composed of a semiconductor material such as silicon. The metal layer is the gate and when a voltage is applied to the gate, it causes the oxide to move, which then changes the electric field within the device and alters the flow of current. In this way, the device can control both voltage and current.
The AUIRLSL3036 is a versatile device and can be used in a variety of applications. Its ability to control both voltage and current makes it a useful component for many circuits. In addition, its ability to switch within nanoseconds makes it suitable for high speed applications. By understanding its working principle and applications, engineers can better develop electronic components that make use of the AUIRLSL3036.
The specific data is subject to PDF, and the above content is for reference
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