Allicdata Part #: | AUIRFR2607ZTRL-ND |
Manufacturer Part#: |
AUIRFR2607ZTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 42A DPAK |
More Detail: | N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR2607ZTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AUIRFR2607ZTRL is a highly efficient and cost-effective field-effect transistor (FET) which is suitable for a range of applications. Developed by Infineon Technologies, it belongs to the single-channel type of MOSFET and is highly compatible with a wide range of integrated circuit chips of other popular manufacturers. The power dissipation of the AUIRFR2607ZTRL is quite low, making it an ideal device for applications such as power conversion and motor control.
The AUIRFR2607ZTRL is designed to operate in a broad range of Vgs (gate to source) voltage, including between -20 V and the maximum breakdown voltage Vdsr of -45 V. At high Vds, the device features a threshold voltage Vgs(th) of -3 V. This low threshold voltage allows for off-state performance during a wide range of temperature and voltage conditions, providing high levels of immunity from transients and other noise sources.
The major advantage of the AUIRFR2607ZTRL is its standard package which is compatible with the packages of other major FET chips. This allows for interchangeability between devices from different manufacturers and also makes the device easy to install and use. The package has an industry-standard six-pin configuration, the most common for single-channel MOSFET devices.
Operation of the AUIRFR2607ZTRL is based on the principle of operation of other FETs. Source and drain regions are connected to two opposite sides of a gate terminal, while the remainder of the gate is connected to a control current or voltage source. When a control voltage or current is applied to the gate, it modulates the source-drain path and allows an associated current or voltage to pass. This is known as the “punch-through” phenomenon.
When a voltage is applied to the gate of the AUIRFR2607ZTRL, the gate acts as a conductive dielectric barrier between the source and drain regions. This enables the device to control a number of different switching and linear functions. For example, the device can be used for power conversion, for controlling motor speed and for driving a variety of other loads. In addition to the increased efficiency, the device also eliminates the need for additional switching devices, making it ideal for compact designs.
The AUIRFR2607ZTRL is available in a variety of versions, and it is possible to purchase versions with different thresholds ranging from -3 V to maximum breakdown voltage Vdsr. Depending on the application, it is possible to choose the best device for the required purpose. The device is also available with different current ratings, ranging from 0.2A to 3.5A.
Overall, the AUIRFR2607ZTRL is a great choice for a range of power control, motor control and other switching applications. The device’s low power dissipation, standard package, and increased efficiency are some of its strongest features. In addition, its low switching threshold makes it suitable for a wide range of temperature and voltage conditions, providing robust immunity from transients and noise sources, making it a reliable device in many applications.
The specific data is subject to PDF, and the above content is for reference
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