Allicdata Part #: | AUIRF3805S-ND |
Manufacturer Part#: |
AUIRF3805S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 160A D2PAK |
More Detail: | N-Channel 55V 160A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | AUIRF3805S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7960pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 290nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF3805S is a single N-channel MOSFET (Metal Oxide Semiconductor Field-effect Transistor). It is a power MOSFET device optimized for switching applications and offers features such as low gate charge, low on-state resistance and high thermal stability. This makes AUIRF3805S a high-performance, reliable and efficient transistor option for a wide range of applications.
Application Field
The AUIRF3805S can be used in variety of applications such as power management systems, robotics and automation, power supplies, motor control, telecommunications,Load switching and voltage regulation. The device utilizes very low gate charge and offers high thermal stability, which makes it an ideal choice for switching applications. It also has low on-state resistance to reduce conduction losses.The AUIRF3805S is also popular for small DC motors and other high-current loads. It can be used as a starting device in AC/DC converters, DC/DC converters and other applications like high current switching.
Working Principle
The AUIRF3805S is an N-type MOSFET with three terminals such as gate, drain and source. In operation, when positive voltage is applied to the gate terminal, a gate current is passed to the N-type inversion layer. This will deplete the inversion layer, allowing current to flow from source to drain. When the voltage on the gate is decreased, the charge carriers are removed from the inversion layer which will reduce the conduction between source and drain.
The MOSFET has internal resistance between source and drain and this is called the on-state resistance or drain-to-source resistance (RDS). The on-state resistance of the AUIRF3805S is very low which gives the device low power dissipation and high efficiency over the wide load range. It also has a relatively low gate threshold voltage, which allows the device to be used in applications with low voltage power supplies.
The AUIRF3805S also offers high input impedance, which enables it to be used as a low-impedance switch. This makes it well suited for high frequency switching applications and high-speed switching operations.
Conclusion
The AUIRF3805S is a reliable and efficient single N-channel MOSFET. It offers low on-state resistance and high thermal stability, making it a great choice for switching, motor control and other related applications. The device’s high input impedance and low gate threshold voltage allow it to be used in applications requiring low voltage power supplies.
The specific data is subject to PDF, and the above content is for reference
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