AUIRF7484Q

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The AUIRF7484Q is a high-current, high-speed voltage-controlled field-effect transistor featuring a low on-resistance drain-to-source channel. This semiconductor is specially designed to replace the moderately-fast bipolar power transistors in power switching circuits. In the AUIRF7484Q implementation, the semiconductor is made using a dielectric semiconductor oxide that combines the best features of a bipolar and a field-effect transistor. This is due to the application of a gate voltage that creates a controlled “inversion” layer in the channel between the source and the drain. It has a low threshold voltage and offers excellent performance.

The AUIRF7484Q has its own specific circuit model that describes its unique working principle. It is composed of two basic parts: the control electrodes (gate and source) and the main output terminals (drain and source). The gate electrode controls the current flow by inducing an electric field in the channel between the source and the drain. When a voltage is applied on the gate electrode, the electric field created causes the electrons from the source region to invert the channel and flow to the drain end. Thus, the AUIRF7484Q acts as switch when a gate voltage is applied and a current passes from the source to the drain.

The characteristics of the AUIRF7484Q make it especially suitable for use as high-voltage power switches. It is widely used for power-control applications such as amplifier bias, motor control, and cyclic regulation. One of their popular applications is in motor control circuits. By controlling the current flowing to the motor, the AUIRF7484Q can be used to control the speed of the motor, preventing any overvoltage or current through the motor.

The AUIRF7484Q also finds use in pulse-width modulation (PWM) and deadtime circuits. PWM is used to control the power supplied to a system by varying its voltage and current, while deadtime circuits allow the designer to accurately delay the start of the waveform. The AUIRF7484Q can be used to control the PWM and deadtime circuits, allowing accurate control over the waveforms and current or voltage supplied.

The AUIRF7484Q can also be used in regulated power supply designs, to control the voltage and current delivered to a load. By connecting the control voltage to the AUIRF7484Q gate, the electric field in the MOSFET channel can be varied to regulate the output voltage, enabling designers to construct a wide range of power supply designs.

In conclusion, the AUIRF7484Q is a high-current, high-speed field-effect transistor offering excellent performance in power-control and voltage-regulation applications, while its low threshold voltage and low on-resistance drain-to-source channel make it an ideal choice for high-voltage power switching. Optimized for use in positive and negative supply circuits, the AUIRF7484Q is an ideal choice for power control and voltage regulation.

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