Allicdata Part #: | AUIRFR120ZTRL-ND |
Manufacturer Part#: |
AUIRFR120ZTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 8.7A DPAK |
More Detail: | N-Channel 100V 8.7A (Tc) 35W (Tc) Surface Mount D-... |
DataSheet: | AUIRFR120ZTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 25µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AUIRFR120ZTRL is a N-channel low voltage power MOSFET that is used in a wide variety of applications, ranging from automotive to industrial. This versatile device offers excellent switching performance in the type of application that usualy requires the use of discrete power MOSFETs. This device combines robust on-resistance and an impressive maximum voltage rating.
The AUIRFR120ZTRL is a device that is part of the MOSFET family. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are a type of transistor that are made from a semiconductor such as silicon. They are controlled by a gate voltage, and are commonly used in many areas such as amplifiers, logic gates, and switches. The MOSFET family can be further divided into three distinct categories: Junction Field Effect Transistors (JFETs), Metal-Oxide-Semiconductor FETs (MOSFETs), and Insulated-Gate FETs (IGFETs). The AUIRFR120ZTRL falls into the MOSFET portion of the family.
The AUIRFR120ZTRL is a single-channel, N-channel MOSFET. The “N” in N-channel MOSFET stands for the type of dopants used in the fabrication of the device. N-channel devices are made with a phosphorus/arsenic combination, while P-channel MOSFETs are made with a boron/arsenic combination. This doping combination helps to create an N-doped source and drain region and a P-doped gate region. By applying an appropriate gate voltage, the current flowing between the drain and the source can be controlled.
The AUIRFR120ZTRL is a low voltage MOSFET, which means that it can easily switch up to 15V. This also implies that it has lower drive requirements than higher voltage MOSFETs. The maximum drain-source blocking voltage of this device is 120V, with a 24A maximum continuous current rating. This makes the AUIRFR120ZTRL an attractive option for use in automotive and industrial applications that require high peak currents.
The AUIRFR120ZTRL has a low RDS(on) of 4.0 ohms. This low resistance improves the efficiency of systems by reducing power loss and heat generation. The device also features a low gate charge of 7.2nC, which further enhances its efficiency by reducing the amount of charge needed to turn the device on. Finally, the AUIRFR120ZTRL has a maximum junction temperature rating of 150°C, which makes it suitable for use in high temperature applications.
In summary, the AUIRFR120ZTRL is a low voltage, N-channel MOSFET that is suitable for use in a wide range of applications. Its low resistance and low gate charge make it an efficient option, and its high voltage rating makes it suitable for automotive and industrial electronics. It is part of the MOSFET family, which means that its working principle is based on controlling the current flow between a source and a drain by applying an appropriate gate voltage.
The specific data is subject to PDF, and the above content is for reference
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