BAR61E6327HTSA1 Allicdata Electronics

BAR61E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BAR61E6327HTSA1TR-ND

Manufacturer Part#:

BAR61E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF DUAL 100V 140M SOT-143
More Detail: RF Diode PIN - PI Element 100V 140mA 250mW
DataSheet: BAR61E6327HTSA1 datasheetBAR61E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - PI Element
Voltage - Peak Reverse (Max): 100V
Current - Max: 140mA
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 12 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Base Part Number: BAR61
Description

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Diodes - RF, BAR61E6327HTSA1 is an RF diode that helps in switching applications. This type of diode is used for RF signal applications, for example, transmitting or receiving signals via an antenna. The diode is capable of operating at frequencies ranging from 10kHz up to a few GHz. This diode has very low switching times and can be used in a variety of applications.

The application field of the diode can be categorized as: low power switching, high power switching, and switching of RF signals. Because of its very low switching times, this diode is suitable for use in a variety of applications, such as switching of small signal sources and biasing applications. Low power switching applications include the switching of RF technologies that operate within a few hundreds of MHz range, such as GSM, GPS, and Wi-Fi.

The working principle of the BAR61E6327HTSA1 diode involves operating it in a reverse-biased configuration. This creates an electric field across the two ends of the diode which produces a depletion region. This depletion region restricts the flow of current between the two electrodes, making it suitable for low power applications.

It also has a low capacitance which helps it to switch quickly and without any distortions. As the capacitor is only a few picofarads in size, the diode can operate at very high frequencies without any issues. In addition, due to its low capacitance, it can also reduce the inductive coupling which is necessary for a good RF design.

The BAR61E6327HTSA1 also has an exceptionally fast switching time, which is normally on the order of nanoseconds. This makes it well suited for high power switching of RF signals, such as in the case of a radio receiver. This diode can also be used in low power switching applications, as its low capacitance ensures minimal switching delays.

In addition to its application fields and working principle, the diode also offers very durable construction. Its case is designed to be solderable and highly reliable, ensuring that it can be used in a variety of challenge-prone environments. The diode also has a low temperature coefficient, making it suitable for a wide range of temperature ranges.

The BAR61E6327HTSA1 RF diode is a very versatile diode that can be used in a variety of applications. Because of its low switching times and low capacitance, it is well suited for both low power switching and high power switching applications. Its highly reliable construction ensures that it will be able to operate in a variety of challenging environments without fail. The diode’s low temperature coefficient also allows it to be used in a range of temperature ranges.

The specific data is subject to PDF, and the above content is for reference

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