BAR6404WH6327XTSA1 Allicdata Electronics

BAR6404WH6327XTSA1 Discrete Semiconductor Products

Allicdata Part #:

BAR6404WH6327XTSA1TR-ND

Manufacturer Part#:

BAR6404WH6327XTSA1

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF PIN 150V 100MA SOT323
More Detail: RF Diode PIN - 1 Pair Series Connection 150V 100mA...
DataSheet: BAR6404WH6327XTSA1 datasheetBAR6404WH6327XTSA1 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.06435
6000 +: $ 0.06045
15000 +: $ 0.05655
30000 +: $ 0.05187
75000 +: $ 0.04991
Stock 9000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 150V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BAR64-04
Description

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Diodes have a variety of uses, ranging from simple switches to complex rectifier circuits. One such diode, the BAR6404WH6327XTSA1 diode, is designed for use in radio frequency (RF) applications. In this article, we discuss the application fields and working principle of the BAR6404WH6327XTSA1.

Applications

The BAR6404WH6327XTSA1 is an RF diode used mainly in wireless communication systems. It is ideally suited for applications such as wireless modem systems, wireless data links, pointing antenna systems, ADS-B systems, cellular networks, and two-way radio systems. It is also suitable for use in satellite systems and optical communications equipment.

In addition, the BAR6404WH6327XTSA1 is a high-performance diode with excellent linearity, a low noise figure, and low power consumption. It is also suitable for use in radio frequency amplifiers, frequency multipliers, switchable transmitters and receivers, and low-noise pre-amplifiers.

Working Principle

The BAR6404WH6327XTSA1 is an RF diode constructed with an epitaxial silicon substrate that is heavily doped with antimony, providing the advantage of high input impedance. The diode is also equipped with a built-in termination structure, which provides additional impedance control and enhances its linearity.

The diode works by conducting a current when it is reverse-biased by the input signal, and consequently generating an output voltage drop that is proportional to the input signal. Thanks to its built-in termination structure and high doping levels, the BAR6404WH6327XTSA1 is able to provide excellent linearity.

Due to its high linearity, the BAR6404WH6327XTSA1 is capable of generating low levels of distortion, providing superior performance in communications systems. Furthermore, its low noise figure, combined with its low power consumption, allows it to offer excellent circuit performance at an affordable price.

Conclusion

The BAR6404WH6327XTSA1 is a high-performance RF diode designed for use in wireless communication systems. It is capable of providing superior linearity, low distortion, low power consumption, and low noise figure, allowing it to offer excellent circuit performance at an affordable price. It is ideally suited for applications such as wireless modem systems, two-way radio systems, satellite systems, and optical communications equipment.

The specific data is subject to PDF, and the above content is for reference

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