BAR6403WE6327HTSA1 Discrete Semiconductor Products

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The BAR6403WE6327HTSA1 is a high-performance, high linearity, GaN-on-silicon power transistor. It is designed to provide up to 40 watts of RF eirp power over a wide operating range. This power transistor has excellent high frequency performance, power gain and linearity, making it suitable for a wide range of high-power RF and microwave applications. This device is available in two plastic packages: TO-264 (top-mounted) and an open-air package.

BAR6403WE6327HTSA1 is well suited for use in mobile base station applications such as cellular base stations, GSM/CDMA/WCDMA/LTE, public safety communications and broadcasting systems. It is also ideal for commercial applications such as ISM band amplifiers and industrial applications such as medical imaging equipment, microwave ovens and process control.

The BAR6403WE6327HTSA1 is also suitable for radar applications such as military and commercial airborne radar, ground based radar systems and automotive radars. This high-performance RF power transistor can be used in consumer applications such as multiband radio units and satellite radio systems.

The BAR6403WE6327HTSA1 is designed to operate over a wide temperature range, from -55° C to +150° C. This feature makes it very suitable for use in automotive and harsh environment applications where severe temperature changes can occur. The device also has an integrated pre-biased driver circuit and ESD protection.

The working principle of BAR6403WE6327HTSA1 is based on the concept of a field effect transistor (FET). It is essentially a solid-state switch that is controlled by a voltage applied to the gate electrode. The device consists of two parallel conducting pathways, called the source and drain. When a voltage is applied to the gate electrode, it creates an electric field which modulates the current flow between the source and drain. The amount of current flowing through the device depends on the voltage applied to the gate. The higher the voltage, the more current will flow.

The BAR6403WE6327HTSA1 is an ideal choice for many RF and microwave applications due to its excellent performance, high power gain and linearity, as well as its wide operating temperature range. This power transistor can be used in base station, radar, consumer and industrial applications.

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