BAR6406E6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BAR6406E6327HTSA1TR-ND |
Manufacturer Part#: |
BAR6406E6327HTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF CA 150V 100MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Anode 150V 100mA 250m... |
DataSheet: | BAR6406E6327HTSA1 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03333 |
6000 +: | $ 0.02898 |
15000 +: | $ 0.02463 |
30000 +: | $ 0.02318 |
75000 +: | $ 0.02174 |
150000 +: | $ 0.01884 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Anode |
Voltage - Peak Reverse (Max): | 150V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 20V, 1MHz |
Resistance @ If, F: | 1.35 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAR64-06 |
Series: | -- |
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The BAR6406E6327HTSA1 is a high power, low capacitance, schottky diode packaged in a leadless surface mountable mold which provides good electrical connection, high isolation and enhanced performance. This diode is ideal for use in RF applications such as wireless, base station, and satellite applications, where high power and frequency is required.
The BAR6406E6327HTSA1 is a packaged in a leadless surface mountable mold which provides good electrical connection, high isolation and enhanced performance. This device features low capacitance of 0.1pF and low thermal resistance of 0.25°C/W which makes it suitable to use in RF applications. It also features high power handling capacity of 5W and high frequency rating of up to 6GHz. The BAR6406E6327HTSA1 is RoHS compliant and is available in a variety of different configurations including surface mount, thru-hole, and SMD varieties.
The working principle of the BAR6406E6327HTSA1 is based on the Schottky diode principle, where a barrier of low resistance is formed when a P-type and N-type semiconductor are brought in contact with each other. This barrier enables an electric current to flow from the anode (positive terminal) to the cathode (negative terminal). When a positive voltage is applied to the diode, the electrons in the N-type material are attracted to the P-type layer and are allowed to pass through. When the voltage is negative, no current can flow as the N-type electrons are repelled by the P-type material and cannot pass through. This is the basic principle that is employed in the BAR6406E6327HTSA1 which enables it to rectify AC signals into DC, setting it to be used in a variety of RF applications.
The BAR6406E6327HTSA1 has been designed specifically for RF applications where high power and frequency are required. It is highly suitable to be used in wireless, base station and satellite applications due to its low capacitance, thermal resistance and high frequency rating. The device is also RoHS compliant, meaning that it complying with European Directive 2011/65/EU.
In summary, the BAR6406E6327HTSA1 is a high power, low capacitance and RoHS compliant schottky diode that is ideal for use in RF applications such as wireless, base station and satellite applications. The device features a low capacitance of 0.1pF and a low thermal resistance of 0.25°C/W which enables it to operate at high power levels and frequencies. The device is designed to rectify AC signals into DC and is RoHS compliant, meeting the requirements of the European Directive 2011/65/EU.
The specific data is subject to PDF, and the above content is for reference
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BAR6702VH6327XTSA1 | Infineon Tec... | -- | 1000 | DIODE RF PIN 150V 200MA S... |
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BAR6304WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6305WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6306WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6402LRHE6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 150V 100MA T... |
BAR6404WE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SER 150V 100MA S... |
BAR6405E6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6405WE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6405WE6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6406WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CA 150V 100MA SO... |
BAR6704E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE SIL PIN 150V 200MA ... |
BAR66E6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN ARRAY 150V 200M... |
BAR6302WH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SW 50V 100MA SCD... |
BAR63V-03-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR63V-04-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR6303WE6327HTSA1 | Infineon Tec... | 0.03 $ | 93000 | DIODE RF SGL 50V 100MA SO... |
BAR6302VH6327XTSA1 | Infineon Tec... | 0.04 $ | 87000 | DIODE RF SW 50V 100MA SC7... |
BAR6402VH6327XTSA1 | Infineon Tec... | -- | 33000 | DIODE RF PIN 150V 100MA S... |
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BAR6404E6327HTSA1 | Infineon Tec... | 0.04 $ | 30000 | DIODE RF SER 150V 100MA S... |
BAR6405E6327HTSA1 | Infineon Tec... | 0.04 $ | 9000 | DIODE RF CC 150V 100MA SO... |
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