BAR6405E6327HTSA1 Allicdata Electronics

BAR6405E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BAR6405E6327HTSA1TR-ND

Manufacturer Part#:

BAR6405E6327HTSA1

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF CC 150V 100MA SOT-23
More Detail: RF Diode PIN - 1 Pair Common Cathode 150V 100mA 25...
DataSheet: BAR6405E6327HTSA1 datasheetBAR6405E6327HTSA1 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.03333
6000 +: $ 0.02898
15000 +: $ 0.02463
30000 +: $ 0.02318
75000 +: $ 0.02174
150000 +: $ 0.01884
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 150V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BAR64-05
Description

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The BAR6405E6327HTSA1 application field and working principle is mainly related to RF diodes. RF diodes are components that allow only one-way current flow. This component is called a rectifier in the electronics industry which consists of two or more atoms. The BAR6405E6327HTSA1 application is mainly used as rectifiers in radio frequency electronics circuits.

A rectifier is used to convert alternating current (AC) to direct current (DC). This process is known as full-wave rectification. The BAR6405E6327HTSA1 application can also be used for demodulation and limiters within RF circuits. The efficiency of the device depends on the number of atoms within the component.

The BAR6405E6327HTSA1 application features a maximum voltage rating of 82 V, a maximum current rating of 250 mA, and a maximum power dissipation of 0.5 W. The package features a TO-220F surface-mount package, which is made up of a dielectric material, such as polyester or PTFE, that insulates the package against electric shock. The BAR6405E6327HTSA1 is rated for a junction temperature up to 125 ºC.

The working principle of the BAR6405E6327HTSA1 application is based on the PN junction diode. This type of diode consists of two connected semiconductor layers, the P-type and the N-type material. These layers form a PN junction, and the current flow is always in one direction. The PN junction diode can be used for applications such as polarity protection, rectification, voltage regulation, and pulse shaping.

The reversibility of the application lies in its ability to block current in one direction and allow current to pass through in the opposite direction when the anode or cathode is activated. This means that when an anode is electrically activated, current will only flow through the PN junction diode in the reverse direction. This application is especially useful for AC/DC applications.

A voltage drop is created when the component is being utilized in rectification mode. When the anode is activated, a negative voltage will be created, while a positive voltage is created when the cathode is activated. The voltage drop is also known as the forward voltage drop, and it is a measure of the component\'s efficiency. The higher the forward voltage drop, the more efficient the component is.

The BAR6405E6327HTSA1 application is a highly efficient component which is suitable for use in a variety of situations. This component is especially useful for RF applications where a higher degree of efficiency is required. The component is also suitable for use in rectification, voltage regulation, and demodulation applications. The component features a maximum voltage rating of 82 V, a maximum current rating of 250 mA, and a maximum power dissipation of 0.5 W. The package features a TO-220F surface-mount package, which is made up of a dielectric material, such as polyester or PTFE, that insulates the package against electric shock.

The specific data is subject to PDF, and the above content is for reference

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