Allicdata Part #: | BAR6302VH6327XTSA1TR-ND |
Manufacturer Part#: |
BAR6302VH6327XTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SW 50V 100MA SC79 |
More Detail: | RF Diode PIN - Single 50V 100mA 250mW PG-SC79-2 |
DataSheet: | BAR6302VH6327XTSA1 Datasheet/PDF |
Quantity: | 87000 |
3000 +: | $ 0.03159 |
6000 +: | $ 0.02747 |
15000 +: | $ 0.02335 |
30000 +: | $ 0.02197 |
75000 +: | $ 0.02060 |
150000 +: | $ 0.01785 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | PG-SC79-2 |
Base Part Number: | BAR63 |
Description
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Introduction
BAR6302VH6327XTSA1 is a RF diode module, which is typically used for X-band applications, such as radar detection and communication. This diode module is designed and manufactured using advanced thick film hybrid technology, which provides excellent RF linearity, fast switching speed and high instantaneous power dissipation.Application Field and Working Principle
BAR6302VH6327XTSA1’s applications mainly consist in high power RF relay, filtering and dynamic attenuation in the X-band region. The diode module can be used as switch, cantennas and phase shifters, etc. The fundamental operating principle of the diode is based on the flow of current between the diode and the external circuit.When a voltage is applied, the diode “pushes” the electrons through, allowing current to flow. This is known as the forward-biased region of the diode. When the applied voltage is reversed, however, the diode’s depletion region prevents electrons from flowing and electric current stops. This is known as the reverse-biased region.The BAR6302VH6327XTSA1 diode is designed using thick film hybrid technology, which allows for the diode to withstand higher power dissipation and provide better RF linearity. The diode also has excellent switching speed up to 30PHz.Conclusion
In conclusion, the BAR6302VH6327XTSA1 is an advanced RF diode module, which is designed and manufactured using thick film hybrid technology. Due to its excellent RF linearity and fast switching speed, the diode module is used in X-band applications, such as radar detection and communication. It is suitable for high power RF relay, filtering and dynamic attenuation in the X-band region.The specific data is subject to PDF, and the above content is for reference
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