BC850BW,135

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Bipolar junction transistors (BJTs) are commonly used as an active device in many circuits due to their ability to amplify an applied voltage or current. The BC850BW,135 is a PNP type BJT manufactured using the low-cost Plastic-Encapsulated Material (PEM) process. This device is primarily used for switching, sensing, and amplification applications in consumer, industrial and automotive electronics.

BC850BW,135 Properties

The BC850BW,135 is a PNP type BJT which sports an Emitter-Base voltage of 6V and a Collector-Base voltage of 40V with a maximum collector current of 800mA. It also has an Hfe (DC Current Gain) at 0.2mA of 625 and a DC current gain at 5mA of 625. The components thermal resistance is 310°C/W and the total power dissipation is 800mW.

BC850BW,135 Applications

The BC850BW,135 is ideal for many by amplifier, switching, and other applications due to its low cost, large current gain and relatively low noise. Common applications include motor control, audio amplification, instrumentation, sensing, small signal amplification, and general purpose switching.

BC850BW,135 Working Principle

Bipolar transistors are three-terminal devices in which the various terminals have different functions. The emitter terminal is used to inject electrons into the semiconductor material, the base terminal is responsible for controlling the flow of electrons, and the collector terminal is used to collect electrons as they pass through. The voltage applied between the collector and emitter terminals is amplified, while the base and emitter terminals also receive a small voltage, which is responsible for controlling the current flow.

Modern BJTs are constructed in a variety of ways, but the most common structure is the junction gate field-effect transistor (JGFET). In this structure, a very thin layer of semiconductor material is sandwiched between two extremely thin layers of oxide material. The oxide layers act as the gate and effectively control the flow of electrons across the two semiconductor layers. The gate voltage is then varied in order to control the flow of electrons and ultimately, the current through the BJT.

In the BC850BW,135, the change in voltage at the gate is then directly proportional to the amount of current conducted through the transistor. This effect is known as the amplification effect, where a small signal at the emitter is modified by the base and amplified at the collector. This is achieved because the current gain of a BJT transistor is determined by the ratio of collector current to base current, which is determined by the type of device constructed.

Conclusion

The BC850BW,135 is a low-cost PNP type bipolar transistor manufactured using the Plastic-Encapsulated Material (PEM) process. The device is suitable for many amplifier, switching, and other applications due to its large current gain and relatively low noise. It works on the principle of a three-terminal device, with the base terminal controlling the flow of electrons by applying a small voltage. The collector current is then amplified based on this applied voltage, and the current gain of the transistor is determined by the ratio of collector current to base current.

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