BC856B/DG/B3,215 Allicdata Electronics
Allicdata Part #:

BC856B/DG/B3,215-ND

Manufacturer Part#:

BC856B/DG/B3,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS GEN PURPOSE TO-236AB
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250m...
DataSheet: BC856B/DG/B3,215 datasheetBC856B/DG/B3,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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BC856B/DG/B3,215 is a type of bipolar junction transistor (BJT) and it belongs to the single transistor variety. The purpose of this transistor is to serve as a high-gain, low-noise, low-leakage amplifier. In the application field, the BC856B/DG/B3,215 transistor is used in low-power and power circuits, including power amplifiers, audio amplifiers and preamplifiers, switchers, voltage regulators, motor and battery control, and motor drivers. It can also be used as a switch in logic applications.

The working principle of BC856B/DG/B3,215 is that it is composed of three semiconductor layers of different widths, which form a junction between them. This junction is known as a bipolar junction. When the transistor is active, the base-emitter junction is forward biased, allowing electrons to flow from the emitter to the base. This causes an excess of current to flow into the base of the transistor, which is then amplified in the collector-emitter junction. The amplified current can then be used to control the power flow from the source to the load.

In order to operate, the BC856B/DG/B3,215 transistor needs a base current of 1 mA, a voltage of 0.22 V and a power dissipation of 250 mW. Its gain is typically about 900 at 70 MHz and its typical capacitance is between 16 and 18 pF. In addition, its operating temperature range is -55 to +150°C and its storage temperature range is -65 to +150°C.

The BC856B/DG/B3,215 is available in a variety of packages, including TO-92, TO-126 and SOT-23. It is also available in surface-mount packages, such as SOT-223 and SOT-88. It has a lead-free termination finish, making it a popular option for applications where environmental compliance is a must.

Overall, the BC856B/DG/B3,215 is a reliable, small and low-cost bipolar junction transistor, ideal for applications such as low-power and power circuits, audio amplifiers and preamplifiers, switchers, voltage regulators, motor and battery control, and motor drivers. Its wide availability in a variety of packages also makes it a popular option for commercial use.

The specific data is subject to PDF, and the above content is for reference

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