BC850CE6359HTMA1 Allicdata Electronics
Allicdata Part #:

BC850CE6359HTMA1-ND

Manufacturer Part#:

BC850CE6359HTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP SOT23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 250MHz 330m...
DataSheet: BC850CE6359HTMA1 datasheetBC850CE6359HTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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BC850CE6359HTMA1 is a plug-in type NPN Silicon BJT, which is one of the types of transistors in the family of Bipolar Junction Transistors (BJT). As a single type device, it has three terminals that help it to function and they are the emitter, base and collector terminals (also known as E, B, and C).

BC850CE6359HTMA1 has a few different uses and applications, the most common one being the audio amplifier circuits and switching applications. Due to its precise current gain, it can also be used for circuit amplification, such as for analog and digital electronic signals.

BC850CE6359HTMA1 works by using a small current at the base terminal and then amplifying that small current and outputting it from the collector terminal. The amount of current gain depends on how much current is put into the base terminal. The ratio is usually around 100:1, where 100 times the base current is output at the collector terminal.

BC850CE6359HTMA1 is also a good choice for switching applications due to the fact that it can handle high-voltage and current levels. This makes it ideal for high power applications such as solar cells and industrial automation. Furthermore, it also has a high level of frequency stability, which makes it suitable for oscillator and high-frequency circuits.

The working principles of BC850CE6359HTMA1 are also interesting to note as it follows the basic principles of a BJT. It uses the flow of electrons from the emitter to the collector to create the amplification of current. This happens when a voltage is applied to the base terminal, which causes the PN junction to become forward biased and the electrons from the base to the emitter to flow. This, in turn, raises the potential of the base-collector junction and attracts electrons from the collector to the base. These in turn create a larger current gain from the base to the collector terminal.

To conclude, BC850CE6359HTMA1 is a single type BJT device that has many practical applications in both analog and digital circuits. It works by using the amplification of currents according to the base current, which can range from 100:1. Moreover, it also has a high level of stability in frequency, making it perfect for oscillator application. Therefore, this small device can be used in many different applications and is a valuable asset to many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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