BC856B/DG/B3,235

BC856B/DG/B3,235 Application Field and Working Principle

The BC856B/DG/B3,235 is a single transistor, bipolar junction transistor (BJT). It is a general purpose device with low noise, high gain and high breakdown voltage, making it suitable for a wide range of applications.

The BC856B/DG/B3,235 is a NPN (positive-negative-positive) type of transistor, meaning it is a three terminal device composed of two P-type and one N-type semiconductor layers, respectively. The middle, or base, terminal of the V-shaped construction is the most important, and it is where the biasing voltage or current is applied for normal transistor operation. Applying a small base current will control the collector and emitter current.

The BC856B/DG/B3,235 is a general purpose, low power BJT designed to be used in sensor and control applications. It is designed to operate over a wide range of currents, with a typical operating current of 1 mA to 500 mA, and an operational breakdown voltage of 160 V. The device also has a very low noise figure of 0.04 dB and a very high power gain at 300 MHz, which is useful for applications requiring low noise and higher frequency operation, such as for VHF or UHF communications devices.

The BC856B/DG/B3,235\'s working principle relies on the biasing of the base terminal, with a small current or voltage, to control the collector and emitter current. The biasing voltage is dependent on the specific application, but the base terminal is designed to accept a biasing current of approximately 1 mA to 560 m

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