BC859B,215

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	250mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BC859

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BC859B,215 is a bipolar junction transistor (BJT) fabricated with a silicon NPN epitaxial planar process. The device has been designed for low frequency, audio and general amplification and switches applications.BC859B,215 consist of three terminals, namely Base, Emitter and Collector. An NPN transistor has two P-type material between N-type material. P Type material is also called as a dopant due to which it will offer resistance to the flow of electrons. The NPN transistor is a negatively charged particle. The P-type material constitutes of holes due to the absence of electrons. The current flow is from collector to emitter part, this current is called as collector current. The flow of current is due to the flow of electrons from the collector terminal to the emitter terminal.The collector of BC859B,215 is the source of electrons and the emitter terminal is responsible for controlling and regulating the current flow. The base on the other hand is responsible for providing the necessary input or base current. A small base current is enough to modulate a large collector current. This is known as current gain or amplification factor.The working principle of BC859B,215 can be explained using the Base-Emitter pair. When a small amount of current flows through the base terminal it modulates the high current capacity in the collector and emitter region. Due to the base-emitter diode, the electrons from the collector find their way to the emitter terminal, thus allowing current to flow from collector to emitter.BC859B,215 is a wide band general purpose transistor which can be used in audio and low frequency applications. It can be used in a circuit as a switch or amplifier. It also finds its application in process control and building alarm systems. It is also used in applications such as voltage stabilization and voltage regulators.BC859B,215 is a simple device, thus making it suitable for small signal and low power applications. It is easy to use and design compared to other devices, making it ideal for new users to understand and use the device without any difficulty.In conclusion, BC859B,215 is an NPN bipolar junction transistor with uncomplicated circuits and simple operation. It can be used in small signal and low power applications, such as audio, low frequency and general amplification and switch applications. It is easy to design and use making it a perfect choice for new users.

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