BLF647PSJ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.3GHz
Gain:	17.5dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	200W
Voltage - Rated:	65V
Package / Case:	SOT-1121B
Supplier Device Package:	LDMOST
Base Part Number:	BLF647

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Introduction

The BLF647PSJ is a High Voltage MOSFET designed primarily for use in high power WLAN applications. The device utilizes advanced MOSFET technology that provides significant reduction in gate charge and low on-resistance while maintaining low levels of input and output capacitance. Its low RDS(on) and high blocking voltage also make it ideal for DC-DC converters, RF amplifiers, modulators, and other high power RF applications. The BLF647PSJ is well suited for use in applications that require high efficiency, stable performances, and low EMI.

Application Field

The BLF647PSJ is a high voltage MOSFET with a blocking voltage (VDSS) of 600V and a continuous DC drain current (ID) of 30A. Its features make it ideal for use in high power WLAN applications, such as WiMAX, Wi-Fi, WCDMA, and HSDPA. It is also suitable for a variety of high power RF applications, such as RF amplifiers, DC-DC converters, modulators, PA bias, and TDD power designs. The device is also suitable for use in LED lighting, solar inverters, switching power supplies, and motor control applications.

Working Principle

The BLF647PSJ is a N-channel, Enhancement type MOSFET. When a voltage is applied to the gate, it creates an inversion layer of electrons in the channel which reduces the resistance between the drain and source. This allows current to flow from the drain to the source and then the device will act as an amplifier or switch. The main advantage of using this type of device is that the gate current can be very low, allowing for very high input impedance, good signal fidelity, and low EMI.

Conclusion

The BLF647PSJ is a high voltage MOSFET that is ideal for a variety of high power RF and WLAN applications. Its design utilizes an advanced MOSFET technology that provides high efficiency, low EMI, and low input and output capacitance. The device also has a low RDS(on) and high blocking voltage, making it well suited for both DC-DC converters and RF amplifiers. In conclusion, the BLF647PSJ is an excellent choice for a variety of applications ranging from high power RF to LED lighting.

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