BLF6G20LS-140,118

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BLF6G20LS-140,118 is a kind of high-performance RF transistor with field effect technology. It is designed to be used in applications which require the highest quality performance and reliability, such as high-end audio, high power amplifier and high power switching. It is manufactured using state of the art technologies to provide superior performance, reliability and superior package.

Application Field

BLF6G20LS-140,118 is mainly applied in radio frequency (RF) amplifiers, power switching, and power distribution, Some of the common applications in this application field include RF amplifiers, microwave transmit modules and down-conversion modules. The transistor is also suitable for high-frequency amplifiers, switching regulators, and other RF power applications.

Working Principle

The BLF6G20LS-140,118 is a small signal N-channel enhancement-mode field effect transistor (FET), with high output power and excellent RF characteristics. It is composed of a ‘source’ terminal, a ‘drain’ terminal and a ‘gate’ terminal for controlling current flow. It is also able to withstand high-power supply voltages, with a voltage rating of up to 140 V. It works by using the gate-source voltage to control current flow between the source and drain. During an active operation, a relatively low voltage is applied to the gate terminal to induce a low current drain, while a relatively high voltage is applied to the gate terminal to induce a high current drain.

The BLF6G20LS-140,118 transistor has a higher gain compared to the standard MOSFET transistors, which can provide up to 200 watt RF power for amplifiers. The device has low self-heating, low noise and high frequency Stability, which makes it well suited for radio automotives, RF power amplifiers and microwave communication systems. The high-frequency stability of the device is obtained by using advanced fabrication and design techniques.

In conclusion, the BLF6G20LS-140,118 is a reliable and high-performance RF transistor. It provides high RF power without causing self-heating and noise, and is suitable for multiple applications, including radio frequency amplifiers, power switching and power distribution. Its gate-source voltage control of current flow allows for precise control of the device and it is able to hold input voltages up to 140 V, offering excellent high-frequency stability for high-power applications.

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