BLF6G20-180PN,112 Allicdata Electronics
Allicdata Part #:

568-8641-ND

Manufacturer Part#:

BLF6G20-180PN,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18DB SOT539A
More Detail: RF Mosfet LDMOS (Dual), Common Source 32V 1.6A 1.8...
DataSheet: BLF6G20-180PN,112 datasheetBLF6G20-180PN,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.8GHz ~ 1.88GHz
Gain: 18dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 1.6A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Base Part Number: BLF6G20
Description

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BLF6G20-180PN, 112 is one of the most popular and widely used RF transistors. It is a field effect transistor (FET) which is used for many different applications in different industries. In general, FETs are used to control current or voltage in a circuit, depending on the type of transistor used.The BLF6G20-180PN, 112 is a type of radio frequency transistor which is used for radio frequency amplification and signal processing applications. It is a CMOS field effect transistor (FET) specifically designed for RF applications. This type of transistor has many advantages over traditional BJT transistors including low noise operation and high speed switching.The BLF6G20-180PN, 112 has a maximum operating frequency of 1.5 GHz and a maximum power dissipation of 12 watts. It has a drain current rating of 500 mA and a drain-source break down voltage of 20V. It has a high gain bandwidth of over 6 GHz and can handle up to a 1W RF power.The BLF6G20-180PN, 112 is commonly used for RF amplification, signal processing, frequency conversion, and local oscillator applications. It can also be used as a mixer, amplifier, and limiter in RF circuit designs. This can help to improve the performance of the circuit and make it more efficient.The working principle of the BLF6G20-180PN, 112 is based on the principle of field effect. A metal-oxygen-semiconductor (MOS) structure is created in the transistor where there is an electric field in between the source and drain. This electric field changes the resistance of the transistor and helps to control the current that flows through the circuit. This is done by manipulating the voltage applied to the gate, which in turn affects the electric field in between the source and drain.The BLF6G20-180PN, 112 is a very versatile transistor and can be used in a wide range of applications. It is commonly used in the automotive, telecom, aerospace, and defense industries. It is also becoming increasingly popular in the consumer electronics market, due to its low cost and high performance.Overall, the BLF6G20-180PN, 112 is a highly reliable radio frequency transistor which can be used for multiple applications. It provides excellent performance in terms of its RF power handling, noise figure, and frequency range. This makes it a good choice for many different types of circuits, allowing for more efficient designs. Therefore, it is not surprising that the BLF6G20-180PN, 112 is becoming increasingly popular and widely used in many different industries.

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