Allicdata Part #: | BLF6G27LS-100,118-ND |
Manufacturer Part#: |
BLF6G27LS-100,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PWR LDMOS SOT502 |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 17dB 14W... |
DataSheet: | BLF6G27LS-100,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.5GHz ~ 2.7GHz |
Gain: | 17dB |
Voltage - Test: | 28V |
Current Rating: | 29A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 14W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF6G27 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF6G27LS-100,118 are a type of field effect transistor, or FET, that is designed to operate as an RF amplifier, though various modifications can be made to suit wide-ranging application. FETs, MOSFETs, and transistors all belong to the same general family—solid state devices, and each device is designed to control and direct the flow of electrons in circuits.
Working Principle
FETs and MOSFETs are both current-controlled devices with four important terminals: the Source, the Drain, the Gate, and the Body. The amount of current that passes from Source to Drain is affected by the voltage applied at the Gate. These types of devices are inherently Reverse Biased and actively conduct when the Gate voltage is applied, meaning that they are in their "Off State" when their Gate voltage is zero.
Structure and Operation
Field effect transistors, or FETs, are made from three major components: the substrate, the top metal layer, and the dielectric layer. The metal layer acts as the Gate, Source, and Drain, while the dielectric layer acts as a two dimensional insulator, allowing for high frequency switching. The Gate is a metal plate that is placed between the Source and Drain. By applying a negative voltage to the Gate, it causes the "channel" below to become "pinched off," preventing any current from crossing from Source to Drain. In some FETs, the body also helps control current between Source and Drain.
Applications
BLF6G27LS-100,118 and similar FETs have a wide range of applications, including RF amplifiers, switch-mode power converters, analog circuits, and digital logic. These devices are most commonly used in RF applications, as they have a low noise figure and can amplify high frequency signals. Additionally, the low gate capacitance and high transconductance makes them well suited for high frequency operation.
Advantages
The BLF6G27LS-100,118 FETs offer many advantages over traditional transistors, such as higher gain, higher power efficiency, and increased noise immunity. FETs are also able to operate over a wider frequency range and are better suited for wide bandwidth applications. Additionally, their low power dissipation makes them more energy efficient than other transistors.
Conclusion
The BLF6G27LS-100,118 FETs are an ideal solution for a wide range of RF applications, including RF amplifiers, switch-mode power converters, analog circuits, and digital logic. These devices are low-noise, have a low gate capacitance, and are capable of operating over a wide frequency range, enabling them to be used in applications where other transistors may fail. Additionally, they offer a number of advantages, such as higher gain, higher power efficiency, and increased noise immunity.
The specific data is subject to PDF, and the above content is for reference
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BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
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BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
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