BLF6G20-110,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF6G20-110,112 are advanced transistors commonly used in a variety of radio frequency (RF) applications such as high power amplifiers, power controllers, and RF switching. This type of transistor is a dual topology power transistor with an offshore (LEFT) configuration, making it versatile and a good choice for high-frequency applications.

The BLF6G20-110,112 offers an unusual combination of features and performance that makes it highly suitable for RF applications. It is an advanced, high-performance dual-topology power transistor with a LEFT (low-efficiency-switching) topology combined with a SILICONFET® MOSFET structure.

The BLF6G20-110,112 is designed for optimal power operation with very low on-state resistance and excellent peak-to-peak linearity. It has an excellent linearity performance of up to 40 dB for higher output powers. The charge storage capacity is also very high, which means that it is suitable for the pulsed or pulsed-tapped operating modes.

The performance of this device is designed to meet the latest IEEE 802-x protocols, including 802.11a, 802.11ac, and 802.11ax. The device also has a maximum thermal resistance of 0.2 degrees Celsius/W, making it capable of handling large amounts of power.

The BLF6G20-110,112 is also capable of handling very high RF frequencies ranging from 4.9 GHz to 8.5 GHz, making it suitable for the high-frequency applications needed in emerging markets. The device can operate with a supply voltage of 0 to 6V, with a dielectric strength of 1250 VDC.

BLF6G20-110,112 is also capable of working in both Class A and Class B device configurations. This helps provide superior power efficiency for RF power applications. The device also has enhanced power handling capabilities, making it suitable for applications such as high voltage power measurements and switching.

The BLF6G20-110,112 is designed to provide high-performance, reliable operation and excellent performance at very high frequencies. The device’s high voltage output power also provides a high degree of protection against electrostatic shock and surge current induced failure. The high threshold current of this device makes it capable of handling large amounts of power. The low on-state resistance enables this device to work at very high frequencies without any distortion.

The device operates with a convenient scaling factor that allows for scaling up and down in various frequency ranges without having to adjust tuning parameters. This makes the device easy to use for RF design engineers. Additionally, this feature also helps reduce power loss due to parameter mismatches.

In summary, the BLF6G20-110,112 is a highly performance advanced power transistor designed for a wide range of radio frequency applications. It is capable of handling very high frequencies, high output powers, and the switching modes needed for emerging markets. The device features low on-state resistance, high peak-to-peak linearity, and enhanced protection against electrostatic shocks and surge current induced failure. It is also designed to function with an adjustable scaling factor, allowing for easier design and tuning of RF circuits.

The specific data is subject to PDF, and the above content is for reference