Allicdata Part #: | BLF6G10LS-200,118-ND |
Manufacturer Part#: |
BLF6G10LS-200,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 871.5MHZ SOT502B |
More Detail: | RF Mosfet LDMOS 28V 1.4A 871.5MHz 20.2dB 40W SOT50... |
DataSheet: | BLF6G10LS-200,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 871.5MHz |
Gain: | 20.2dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G10 |
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The BLF6G10LS-200,118 is a small signal transistor designed for Radio Frequency (RF) purposes. It is a type of Field Effect Transistor (FET) commonly referred to as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is used in a variety of RF applications in which gain and linearity are desired such as amplifiers, switches, and electronic pulse shaping.
The BLF6G10LS-200,118 is characterized by a high breakdown voltage which allows it to be used in a wide range of applications. It also has a low gate-source capacitance, which reduces the susceptibility of the transistor to noise. The high frequency performance and low noise characteristics make it an ideal choice for RF RF devices.
The BLF6G10LS-200,118 is made up of two back-to-back MOSFETs with independent gates. These two separate gates enable the transistor to operate at frequencies up to 200MHz. In order to achieve this performance, the transistor features a large gate-to-drain resistor that keeps the impedance of the transistor relatively low. This ensures the correct amount of current is applied during operation.
When the BLF6G10LS-200,118 transistor is used in RF applications, it is ideally biased to provide maximum performance. Typically, this requires that the gate-source bias or gate-drain bias of the transistor be adjusted to a suitable voltage. The selected voltage will depend on the requirements of the application and should be adjusted so the transistor operates in the region that provides the best performance.
The BLF6G10LS-200,118 is a versatile transistor that can be used for a wide range of RF applications. It is available in a variety of packages and pinout configurations making it suitable for a range of circuit designs.
The main applications for this transistor include radio transmitter and receiver applications, radio frequency amplifiers, receivers, and VHF/UHF transceivers. Additionally, it can also be used in RF filters and pulse shaping circuits.
In conclusion, the BLF6G10LS-200,118 is a versatile RF transistor with an excellent combination of high frequency performance, low noise, and high breakdown voltage. It is suitable for a range of RF applications requiring gain and linearity such as amplifiers, switches, pulse shaping, and VHF/UHF transceivers.
The specific data is subject to PDF, and the above content is for reference
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BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
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BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
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