BLF6G15LS-250PBRN,

Series:	--
Packaging:	Tube
Part Status:	Last Time Buy
Transistor Type:	--
Frequency:	1.47GHz ~ 1.51GHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	64A
Noise Figure:	--
Current - Test:	1.41A
Power - Output:	60W
Voltage - Rated:	65V
Package / Case:	SOT-1110B
Supplier Device Package:	LDMOST
Base Part Number:	BLF6G15

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The BLF6G15LS-250PBRN is a discrete n-channel junction field-effect transistor (JFET) that is designed for radio frequency (RF) applications. It is an enhancement-mode JFET made with a silicon substrate and it is classified as a RF device because its frequency range is much higher than ordinary JFETs. The BLF6G15LS-250PBRN is mainly used in mobile communications, such as Wi-Fi, 3G, and Bluetooth networks, and its typical applications include high-frequency filtering, impedance matching, and signal amplification in amplifiers and oscillators. JFETs are one of the two main types of field-effect transistors (FETs). FETs are a type of transistor designed to control current flow by using an electric field. The other type of FET is the metal-oxide-semiconductor field-effect transistor (MOSFET) and both contain a gate, a source, and a drain. Unlike bipolar transistors, FETs do not require an amplified input signal to switch on the device. The voltage applied to the gate will control the current flow between the source and the drain and this is known as voltage-controlled current. The BLF6G15LS-250PBRN JFET has a gate-source voltage (Vgs) of -15 volt and a drain-source voltage (Vds) of 250 volt. It is constructed with a silicon mesa substrate for low noise performance and its drain-source on-resistance (Rds) is rated at 0.5 Ohm. Its typical power handling ability is 3 Watts at the maximum temperature of -55°C to 175°C and its maximum drain-source breakdown voltage is rated at 500 volts.The working principle of a FET is quite simple. When the voltage is applied to the gate-source, the electric field is generated between the source and the drain and creates an inversion layer in the channel region. The thickness and width of the inversion layer depend on the applied voltage and the characteristics of the device. The electrons in the inversion layer are attracted to the electric field and the current flow is controlled by the gate voltage, allowing the JFET to act as a switch. The BLF6G15LS-250PBRN is a reliable and efficient device with a low power and temperature rating, making it suitable for RF applications. Its enhanced performance characteristics provide improved noise reduction and distortion performance and higher efficiency, allowing the device to operate over a wide range of frequencies. Because of its RF capabilities and its reliable characteristics, the BLF6G15LS-250PBRN is frequently used in mobile communications systems and is a valuable device for wireless applications.

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