Allicdata Part #: | BLF6G10-200RN,112-ND |
Manufacturer Part#: |
BLF6G10-200RN,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 20DB SOT502A |
More Detail: | RF Mosfet LDMOS 28V 1.4A 871.5MHz ~ 891.5MHz 20dB ... |
DataSheet: | BLF6G10-200RN,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 871.5MHz ~ 891.5MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF6G10 |
Description
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Transistors - FETs, MOSFETs - RFThe BLF6G10-200RN,112 is a high-performance, high-frequency RF switch featuring a fast turn-on, low-loss, and low-distortion RF switch. It is made using advanced GaN technology, which is a state-of-the-art semiconductor technology. This technology helps to reduce the size and power consumption of the switch, allowing for optimized performance in applications such as wireless communications, automotive and consumer electronics.The BLF6G10-200RN,112 is a low-power, unidirectional RF switch with an operation frequency up to 4GHz. It features a near-zero power turn-on operation, minimal distortion and low loss. This enables the switch to provide an optimized RF output performance while minimizing power consumption. The device also features floating source and gate electrodes, allowing it to be used in applications with different voltage levels. The working principle of the switch is based on its GaN P-type and N-type transistors. The switch is operated by applying a voltage to the gate electrodes. When the voltage on the gate electrodes exceeds the power threshold, a current will flow between the source and drain electrodes, allowing the switch to open. Conversely, when the voltage on the gate electrodes drops below the power threshold, the current flow between the source and drain electrodes is blocked and the switch is closed.The BLF6G10-200RN,112 device is ideal for use in a variety of RF applications where high performance, low power, and fast switching performance is required. It can be used in wireless applications such as point-to-point communications, Wi-Fi, cellular networks and RF RFID systems. It can also be used in automotive and consumer electronics applications such as Bluetooth and GPS receivers. In addition, the switch can be used for switching and protection in high-power applications such as power amplifiers and power converters.Overall, the BLF6G10-200RN,112 is a high-performance, low-loss, low-distortion RF switch with a fast turn-on response. Its GaN technology provides optimized RF performance with low power consumption, while its floating source and gate electrodes enable the switch to be used in a variety of applications. These features make the device ideal for use in a range of wireless, automotive and consumer electronics applications, as well as in high-power applications.The specific data is subject to PDF, and the above content is for reference
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